DSM80101M Features Mechanical Data Integrates one NPN Transistor (Q1) and two Switching Diodes (D1, D2) in a Single Compact Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.01 grams (Approximate) 6 6 5 D1 1 D1 D2 Top View 2 5 4 4 D2 Q1 Q1 1 3 2 3 Top View Pin Configuration Device Schematic Ordering Information (Note 4) Part Number DSM80101M-7 Notes: Case SOT26 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 101M Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DSM80101M Document number: DS37318 Rev. 2 - 2 Mar 3 YM ADVANCE INFORMATION NPN TRANSISTOR WITH DUAL SERIES SWITCHING DIODE 2016 D Apr 4 101M = Product Type Marking Code (See Electrical Characteristics Table) YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 2017 E May 5 Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D November 2014 © Diodes Incorporated DSM80101M Maximum Ratings – Q1 (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6.0 V IC(MAX) 500 mA ICM 0.8 A IB 200 mA Value 100 Unit V 75 V Continuous Collector Current Peak Pulse Collector Current @ DC Increment for IC; IB = 300mA; Test Duration >10s for each Step Base Current Maximum Ratings – D1, D2 (@TA = +25°C, unless otherwise specified.) Characteristic Non-Repetitive Peak Reverse Voltage Symbol VRM VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 5) IFM 300 mA Average Rectified Output Current (Note 5) Non-Repetitive Peak Forward Surge Current @ t = 1.0µs IO 200 20 mA A Value 600 Unit mW RJA 208 °C/W TJ, TSTG -65 to +150 °C IFSM Thermal Characteristics Characteristic Power Dissipation (Note 5) Symbol PD Thermal Resistance, Junction to Ambient Air (Note 5) Operating and Storage Temperature Range Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Symbol Min 80 Typical — Max — Unit V 80 6.0 — — — BVEBO ICBO — — — V V IC = 1.0mA, IB = 0 IE = 100µA, IC = 0 100 nA VCB = 80V, IE = 0 VCE(SAT) — — 0.3 V IC = 100mA, IB = 10mA hFE 120 180 350 — IC = 10mA, VCE = 1.0V BVCBO BVCEO Test Condition IC = 100µA, IE = 0 Electrical Characteristics – D1, D2 (@TA = +25°C, unless otherwise specified.) Characteristic Reverse Breakdown Voltage (Note 6) Forward Voltage Symbol V(BR)R VF Min 75 — — Max — 0.715 — 1.0 — 1.25 — 0.1 µA VR = 75V — nA pF VR = 20V ns 0.855 Leakage Current (Note 6) IR Total Capacitance CT — 25 2.0 Reverse Recovery Time trr — 4 Notes: Unit V V Test Condition IR = 100µA IF = 5.0mA IF = 10mA IF = 50mA IF = 150mA VR = 0V, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. DSM80101M Document number: DS37318 Rev. 2 - 2 2 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80101M 800 1,000 VCE = 5V hFE,, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 600 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 100 T A = -55°C 10 150 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 1.2 IB = 5mA VBE(ON), BASE EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) TA = 85°C TA = 25°C IB = 8mA 0.55 0.50 IB = 4mA 0.45 0.40 IB = 3mA 0.35 0.30 IB = 2mA 0.25 0.20 0.15 IB = 1mA 0.10 0.05 0 T A = 150°C RJA = 208°C/W (Note 5) 0.60 IB = 0.1mA VCE = 5V 1.0 0.8 TA = -5 5°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 150°C 0.2 0 0.1 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage 0 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base Emitter Voltage vs. Collector Current 100 0.60 VCB = 80V IE = 0 f = 1MHz 0.55 CAPACITANCE (pF) ICBO, COLLECTOR CUTOFF CURRENT (nA) ADVANCE INFORMATION 700 10 1 0.50 0.45 0.1 -50 0.40 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Collector Cutoff Current vs. Ambient Temperature DSM80101M Document number: DS37318 Rev. 2 - 2 3 of 6 www.diodes.com 0 8 16 24 32 40 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics - D1, D2 November 2014 © Diodes Incorporated DSM80101M 1 10 IC, COLLECTOR CURRENT (A) VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.1 TA = 150°C TA = 85° C TA = -55°C TA = 25° C 1,000 100 TA = 150°C 1 TA = 85°C TA = 25°C 0.1 DC PW = 100ms 0.1 PW = 10ms PW = 1ms PW = 100µs 0.01 0.001 0.0001 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (mA) 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector Emitter Saturation Voltage vs. Ambient Temperature 10 1 TA = 25°C Single Pulse 0.01 0.1 TA = -55°C 0.01 1 10 100 1,000 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 8 Safe Operation Area for Q1 100 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 9 Typical Forward Characteristics - D1, D2 0 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 10 Typical Reverse Characteristics - D1, D2 175 150 TA, AMBIENT TEMPERATURE ( C) ADVANCE INFORMATION IC/IB = 10 125 100 75 50 25 0 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) Fig 11 Operating Temperature Derating - D1, D2 DSM80101M Document number: DS37318 Rev. 2 - 2 4 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80101M Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° All Dimensions in mm B C H K M J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X DSM80101M Document number: DS37318 Rev. 2 - 2 5 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80101M ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DSM80101M Document number: DS37318 Rev. 2 - 2 6 of 6 www.diodes.com November 2014 © Diodes Incorporated