DSM80100M Features Mechanical Data Integrates one PNP Transistor (Q1) and two Switching Diodes (D1, D2) in a Single Compact Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.01 grams (Approximate) 6 6 4 5 D2 5 4 D1 Q1 D1 D2 Q1 1 1 Top View 2 3 3 2 Top View Pin Configuration Device Schematic Ordering Information (Note 4) Part Number DSM80100M-7 Notes: Case SOT26 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 100M Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DSM80100M Document number: DS37319 Rev. 2 - 2 Mar 3 100M = Product Type Marking Code (See Electrical Characteristics Table) YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) YM ADVANCE INFORMATION PNP TRANSISTOR WITH DUAL SERIES SWITCHING DIODE 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D November 2014 © Diodes Incorporated DSM80100M Maximum Ratings – Q1 (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol Value -80 -80 Unit V V Collector-Base Voltage Collector-Emitter Voltage VCBO Emitter-Base Voltage VEBO -4.0 V IC(MAX) -500 mA ICM -1.0 A IB -200 mA Value 100 Unit V 75 V VCEO Continuous Collector Current Peak Pulse Collector Current @ DC Increment for IC; IB = 300mA; test duration >10s for each step. Base Current Maximum Ratings – D1, D2 (@TA = +25°C, unless otherwise specified.) Characteristic Non-Repetitive Peak Reverse Voltage Symbol VRM VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 5) VR(RMS) IFM 53 V 300 mA IO 200 mA IFSM 20 A Average Rectified Output Current (Note 5) Non-Repetitive Peak Forward Surge Current @ t = 1.0µs Thermal Characteristics Characteristic Power Dissipation (Note 5) Symbol Thermal Resistance, Junction to Ambient Air (Note 5) RJA TJ, TSTG PD Operating and Storage Temperature Range Value 600 Unit mW 208 °C/W -65 to +150 °C Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Symbol BVCBO BVCEO BVEBO ICBO VCE(SAT) hFE Min -80 -80 Typ Max -4 120 280 -100 Unit V V V Test Condition IC = -100µA, IE = 0 IC = -1.0mA, IB = 0 nA IE = -100µA, IC = 0 VCB = -60V, IE = 0 -0.25 V IC = -100mA, IB = -10mA 500 IC = -10mA, VCE = -1.0V Electrical Characteristics – D1, D2 (@TA = +25°C, unless otherwise specified.) Characteristic Reverse Breakdown Voltage (Note 6) Forward Voltage Symbol V(BR)R VF Min 75 Max 0.715 0.855 1.0 1.25 0.1 µA VR = 75V nA pF VR = 20V ns Leakage Current (Note 6) IR Total Capacitance CT 25 1.5 Reverse Recovery Time trr 4 Notes: Unit V V Test Condition IR = 100µA IF = 5.0mA IF = 10mA IF = 50mA IF = 150mA VR = 0V, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. DSM80100M Document number: DS37319 Rev. 2 - 2 2 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80100M 1,000 800 TA = 150°C hFE,, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 600 500 400 300 200 TA = 85°C TA = 25°C TA = -55°C 100 VCE = 5V RJA = 208°C/W (Note 5) 100 0 -50 -25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 10 150 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 0.8 1 IC/IB = 10 IB = 8mA -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC, COLLECTOR CURRENT (A) 0.7 IB = 5mA 0.6 IB = 4mA 0.5 IB = 3mA 0.4 IB = 2mA 0.3 IB = 1mA 0.2 0.1 TA = 150°C TA = 85°C T A = 25°C TA = -55°C 0.1 IB = 0.1mA 0 0.01 2 4 6 8 10 V CE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage 0 1.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 100,000 ICBO, COLLECTOR CUTOFF CURRENT (nA) VBE(ON), BASE EMITTER VOLTAGE (V) ADVANCE INFORMATION 700 VCE = 5V 1.0 0.8 TA = -5 5°C 0.6 0.4 TA = 25°C TA = 8 5°C TA = 150°C 0.2 VCB = 100V IE = 0 10,000 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base Emitter Voltage vs. Collector Current DSM80100M Document number: DS37319 Rev. 2 - 2 3 of 6 www.diodes.com 1,000 100 10 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Collector Cutoff Current vs. Ambient Temperature November 2014 © Diodes Incorporated DSM80100M 10 IC, COLLECTOR CURRENT (A) CAPACITANCE (pF) 1.3 f = 1MHz 1.1 0.9 TA = 25°C 0.7 1 DC PW = 100ms 0.1 PW = 10ms PW = 1ms PW = 100µs 0.01 0.001 TA = 25°C Single Pulse 0.5 0 8 16 24 32 40 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics - D1, D2 100 TA = 150°C 10 TA = 85°C 1 0.0001 0.1 IR, INSTANTANEOUS REVERSE CURRENT ( A) IF, INSTANTANEOUS FORWARD CURRENT (mA) 1,000 TA = 25°C T A = -55°C 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 8 Safe Operation Area for Q1 100 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 9 Typical Forward Characteristics - D1, D2 0 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 10 Typical Reverse Characteristics - D1, D2 175 150 TA, AMBIENT TEMPERATURE ( C) ADVANCE INFORMATION 1.5 125 100 75 50 25 0 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) Fig 11 Operating Temperature Derating - D1, D2 DSM80100M Document number: DS37319 Rev. 2 - 2 4 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80100M Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A B C H K M J L D SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 C1 G Y X DSM80100M Document number: DS37319 Rev. 2 - 2 5 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80100M ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DSM80100M Document number: DS37319 Rev. 2 - 2 6 of 6 www.diodes.com November 2014 © Diodes Incorporated