ES3ABF THRU ES3JBF Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 3 A SMBF Cathode Band Top View FEATURES 0.145(3.70) 0.137(3.50) • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives 0.087(2.20) 0.075(1.90) 0.174(4.40) 0.166(4.20) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57mg / 0.002oz 0.217(5.50) 0.201(5.10) Absolute Maximum Ratings and Characteristics Dimensions in inches and (millimeters) Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES3ABF ES3BF ES3CBF ES3DBF ES3EBF ES3GBF ES3JBF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T L = 100 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 100 A Maximum Forward Voltage at 3A VF Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C 1.25 1 1.68 V IR 5 100 μA Typical Junction Capacitance Cj 45 pF Maximum Reverse Recovery Time at I F =0.5A, I R =1A, I rr =0.25A t rr 35 ns RθJA 55 °C/W T j , T stg -55 ~ +150 °C Typical Thermal Resistance 2） Operating and Storage Temperature Range 1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A 2）P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas. 1 ES3ABF THRU ES3JBF Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 3 A Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.5 300 3.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.4 1.8 1.2 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 0.6 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Lead Temperature (°C) 100 Fig.5 Typical Junction Capacitance 70 10 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 80 60 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 1.0 ES3ABF~ES3DBF ES3EBF/WS3GBF 0.1 ES3JBF 0.01 0.001 0 0.5 1.5 1.0 2.0 120 100 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 50 40 30 T J =25°C f = 1.0MHz V sig = 50mV p-p 20 10 1 10 Reverse Voltage (V) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 20 60 0.1 2.5 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 40 20 100 Number of Cycles 2 100