BAP50-03 GENERAL PURPOSE PIN DIODES SOD-323 FEATURES y Low diode capacitance y MARKING: A81 Low diode forward resistance Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Continuous reverse voltage VR 50 V Continuous Forward Current IF 50 mA Power Dissipation (TA=90℃) Pd 200 mW RθJA 85 K/W Junction temperature Tj -65~+150 ℃ Storage temperature TSTG -65~+150 ℃ Thermal Resistance Junction Ambient to Electrical Ratings @TA=25℃ Parameter Symbol Min. Continuous reverse voltage VR 50 Forward voltage VF Reverse current Diode capacitance Diode forward resistance Typ. Conditions IR=10µA 1.1 V IF=50mA IR 100 nA VR=50V Cd1A 0.91 pF VR=0V,f=1MHz Cd1B 1.11 pF VR=0V,f=1MHz Cd2 0.55 pF VR=1V,f=1MHz Cd3 0.35 pF VR=5V,f=1MHz rD 40 Ω IF=0.5mA , f=100MHz; note1 rD 25 Ω IF=1mA , f=100MHz;note1 rD 5 Ω IF=10mA , f=100MHz;note1 １ JinYu Unit V Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. semiconductor Max. www.htsemi.com BAP50-03 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５