RFRAC Dept. InfoComm Philips/TU Delft Bondwires model을 사용한 전력증폭기 출력 정합회로의 구현 김보배°, 양혜민, 이종수 2010. 6. 17 광주과학기술원 정보통신공학과 RFRAC @ GIST CONFIDENTIAL 1 Contents 1. Backgrounds • • 2. RFRAC Dept. InfoComm Typical Power Amplifier Topology Philips/TU Delft Bondwires model Bonding Wire Inductance Test • • • Test structure Inductance Extraction Measured Results 3. Conditions of Philips/TU Delft Bondwires model 4. Evaluation – Power Amplifiers • • 5. 24 dBm Linear Power Amplifier for RFID Reader 34 dBm Linear Power Amplifier for Satellite Communication Conclusions RFRAC @ GIST CONFIDENTIAL 2 Backgrounds (1) RFRAC Dept. InfoComm Typical Power Amplifier Topology Zload RFRAC @ GIST CONFIDENTIAL 3 Backgrounds (2) RFRAC Dept. InfoComm Philips/TU Delft Bondwires model What the Model Calculates • Calculation of the self- and mutual inductance of wires using Neumann’s inductance equation. • DC losses, due to the finite conductivity of the wires is included. • AC losses, due to the skin effect, are accounted for in a zero-th order approximation. RFRAC @ GIST CONFIDENTIAL 4 Backgrounds (3) RFRAC Dept. InfoComm Parameters of Philips/TU Delft Bondwires model z x Name Description Rw Radius of the bondwire Gap Total distance the wire expands StartH Start height of the bondwire above the ground plane MaxH Start height of the bondwire above the ground plane Tilt Tilt (negative value: make an additional reverse loop) Stretch Tilt (negative value: make an additional reverse loop) StopH Stop height of the bondwire above the ground plane RFRAC @ GIST CONFIDENTIAL 5 Bonding Wire Inductance Test (1) RFRAC Dept. InfoComm Test Structure Port 1 Port 2 150 um 100 um 100 um 700 um RFRAC @ GIST CONFIDENTIAL 1100 um 6 Bonding Wire Inductance Test (2) RFRAC Dept. InfoComm Inductance Extraction Ls Rs Ls C1 C2 [ Equivalent Circuit Model ] • • • • Ls : Wire inductance (H) Rs : Wire resistance (Ohm) C1 : Capacitance at port 1 (F) C2 : Capacitance at port 2 (F) 1 jwY21 1 Rs Re Y21 Y11 Y21 C1 jw Y Y12 C 2 22 jw RFRAC @ GIST CONFIDENTIAL 7 Bonding Wire Inductance Test (3) RFRAC Dept. InfoComm Inductance Extraction using ADS RFRAC @ GIST CONFIDENTIAL 8 Bonding Wire Inductance Test (4) RFRAC Dept. InfoComm Measured Results ; Bw_length=700, Loop_height=150 [ Ls 오차: 0.015 nH ] Philips model Measurement RFRAC @ GIST CONFIDENTIAL 9 Bonding Wire Inductance Test (5) RFRAC Dept. InfoComm Measured Results ; Bw_length=1100, Loop_height=150 [ Ls 오차: 0.029 nH ] Philips model Measurement RFRAC @ GIST CONFIDENTIAL 10 Bonding Wire Inductance Test (6) RFRAC Dept. InfoComm Measured Results – Average values Single Wire Inductance @1GHz (nH) 1.2 y = 0.66x + 0.14 1 Double Wire Inductance @1GHz (nH) 0.99 0.8 0.875 0.6 0.595 0.4 0.74 0.2 0 0.6 0.8 1 1.2 1.4 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 y = 0.405x + 0.1125 0.59 0.47 0.62 0.39 0.6 0.8 1 1.2 1.4 Triple Wire Inductance @1GHz (nH) 0.6 0.5 y = 0.3475x + 0.0738 0.4 0.525 0.47 0.36 0.3 0.33 0.2 • X axis : Bondwire length(mm) • Y axis : Inductance(nH) 0.1 0 0.6 0.8 1 1.2 1.4 RFRAC @ GIST CONFIDENTIAL 11 Conditions of Philips/TU Delft Bondwires model RFRAC Dept. InfoComm Name Default Conditions (um) Rw 12.5 12.5 Gap 500 Variable StartH 0 200 MaxH 100 200+loop height (150) Tilt 0 0 Stretch 0 Gap X 0.12 StopH 0 100 Sep Y 0 50 RFRAC @ GIST CONFIDENTIAL 12 Evaluation – 24dBm Linear PA (1) DUT (Device Under Test) RFRAC Dept. InfoComm InGaP/GaAs HBT Process by WIN Semiconductor Corporation RFIN RFOUT Test Board Die on QFN Output matching Probing ZL =11.1-j1.9 ohm @915 MHz RFRAC @ GIST CONFIDENTIAL 13 Evaluation – 24dBm Linear PA (2) RFRAC Dept. InfoComm Output Matching using Philips/TU Delft Bondwires Model @ 915 MHz 4 3 Port Impedance (ohm) 1 50.911+j4.301 2 25.023+j0.707 3 6.222-j5.634 4 11.65-j1.825 Measured Loadline =11.1-j1.9 ohm 2 1 RFRAC @ GIST CONFIDENTIAL 14 Evaluation – 24dBm Linear PA (3) RFRAC Dept. InfoComm Measured Results - Gain @915MHz 32 31.5 dB 31 Gain (dB) 30 29.4 dB 29 28 Simulation Measurement 27 26 16 18 20 22 24 26 Pout (dBm) RFRAC @ GIST CONFIDENTIAL 15 Evaluation – 24dBm Linear PA (4) RFRAC Dept. InfoComm Measured Results – Total Current @915MHz 200 Simulation Measurement 180 160 166.7 mA Itot (mA) 157 mA 140 120 100 80 60 16 18 20 22 24 26 Pout (dBm) RFRAC @ GIST CONFIDENTIAL 16 Evaluation – 24dBm Linear PA (5) RFRAC Dept. InfoComm Measured Results - PAE @915MHz 55 Simulation Measurement 50 44.5 % 45 41.8 % PAE (%) 40 35 30 25 20 15 16 18 20 22 24 26 Pout (dBm) RFRAC @ GIST CONFIDENTIAL 17 Evaluation – 24dBm Linear PA (6) RFRAC Dept. InfoComm Measured Results – 2nd Harmonic @915MHz -30 Simulation Measurement 2nd harmonic (dBm) -32 -34 -35.7 dBm -36 -34.7 dBm -38 -40 -42 -44 16 18 20 22 24 26 Pout (dBm) RFRAC @ GIST CONFIDENTIAL 18 Evaluation – 34dBm Linear PA (1) DUT (Device Under Test) RFRAC Dept. InfoComm InGaP/GaAs HBT Process by WIN Semiconductor Corporation RFIN RFOUT Test Board Die on QFN Output matching Probing ZL =1.3+j0.29 ohm @1644 MHz RFRAC @ GIST CONFIDENTIAL 19 Evaluation – 34dBm Linear PA (2) RFRAC Dept. InfoComm Output Matching using Philips/TU Delft Bondwires Model @ 1644 MHz 3 2 Port Impedance (ohm) 1 50.177+j4.628 2 0.942-j3.222 3 1.31+j0.416 Measured Loadline =1.3+j0.29 ohm 1 RFRAC @ GIST CONFIDENTIAL 20 Evaluation – 34dBm Linear PA (3) RFRAC Dept. InfoComm Measured Results - Gain 38.0 36.0 34.0 Gain (dB) 32.0 30.0 simulation 28.0 measure 26.0 24.0 22.0 20.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 Pout[dBm] RFRAC @ GIST CONFIDENTIAL 21 Evaluation – 34dBm Linear PA (4) RFRAC Dept. InfoComm Measured Results – Total Current 2000 Itot (mA) 1500 Simulation 1000 measure 500 0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 Pout[dBm] RFRAC @ GIST CONFIDENTIAL 22 Evaluation – 34dBm Linear PA (5) RFRAC Dept. InfoComm Measured Results - PAE 45.0 40.0 35.0 PAE (%) 30.0 25.0 simulation 20.0 measure 15.0 10.0 5.0 0.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 Pout[dBm] RFRAC @ GIST CONFIDENTIAL 23 Evaluation – 34dBm Linear PA (6) RFRAC Dept. InfoComm Measured Results - ACPR 60 50 40 ACPR / IMD3 (dBc) 30 20 10 IMD3[simulation] 0 15.0 20.0 25.0 30.0 -10 35.0 ACPR[measure] -20 -30 -40 -50 -60 Pout[dBm] RFRAC @ GIST CONFIDENTIAL 24 Conclusions RFRAC Dept. InfoComm Extraction of Philips/TU Delft bondwires model parameters - Measure the test fixture in various length of bondwires - Bondwire inductance extraction The output matching circuit of power amplifier is measured and simulated using Philips/TU Delft bondwires model. - Measured target impedance is similar to simulated one. The output matching circuit is applied to two power amplifiers. Philips/TU Delft bondwires model is very suitable for prediction of parasitic inductance of bondwire. RFRAC @ GIST CONFIDENTIAL 25