V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Max RDS(on) of 0.555 Ω at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP12N50C, SiHB12N50C, SiHF12N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs in TO-220AB, TO-220 FULLPAK, and D2PAK Packages KEY BENEFITS • • • • • Maximum RDS(on) of 0.555 Ω at VGS = 10 V Low gate charge, Qg max = 48 nC RDS(on) * Qg FOM of 26.64 Ω-nC 100 % avalanche tested Improved Trr / Qrr APPLICATIONS • Lighting • Welding • NB adapters RESOURCES • • • • Datasheet: SiP12N50C, SiB12N50C, SiF12N50C - http://www.vishay.com/doc?91388 More featured products: http://www.vishay.com/ref/featuredmosfets For technical questions contact [email protected] Material categorization: For definitions of compliance please see http://www.vishay.com/doc?99912 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0217-1208 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 • Low Figure-of-Merit Ron x Qg 560 V 0.555 48 Qgs (nC) 12 PRODUCT SUMMARY • Gate Charge Improved VDS (V) at TJ max. O N AND TEC Power MOSFET POWER MOSFETs Power MOSFET 560 V RDS(on) (Ω) VGS = 10 V • Trr/Qrr Improved Qg (Max.) (nC) • Compliant to RoHS Directive 2002/95/EC Qgs (nC) PRODUCT SUMMARY PRODUCT SUMMARY Qgd (nC) 560 V VDS (V) at TJ max. VDS (V) at TJ max. 560 V Configuration RDS(on) (Ω) VGS = 10 V Vishay Siliconix RDS(on) (Ω) VGS = 10 V 0.555 TO-220 FULLPAK 48 Qg (Max.) (nC) TO-220AB 48 Qg (Max.) (nC) 12 Qgs (nC) 12 Qgs (nC) Qgd (nC) 15 Qgd (nC) 15 Configuration Single Configuration SingleS 0.555 SiHP12N50C, SiHB12N50C, SiHF12N50CFEATURES Qgd (nC) 15 Configuration Single TO-220AB D SiHP12N50C, SiHB12N50C, SiHF12N50C TO-220 FULLPAK FEATU 48 12 19 • Low F O L OGY Qg (Max.) (nC) • 100 % Avalanche Tested I VGS = 10 V HN RDS(on) (Ω) V I S H AY I N T E R T E C H N O L O G Y, I N C . INNOVAT VDS (V) at TJ max. • 100 % • Gate FEATURES 62-2012 • Trr/Qr • LowRon Figure-of • Low Figure-of-Merit x Qg 15 Single Comp • 100 % •Avalan •0.555 100 % Avalanche Tested • Gate Charge I • Gate Charge Improved High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs Power MOSFET • T /Q Improved• T /Q Improve in TO-220AB, TO-220 FULLPAK, and D2PAK Packages • Compliant • Compliant to RoHS Directiveto20R G D S GD S G D2PAK (TO-263) S FEATURES D G PRODUCT SUMMARY S N-Channel MOSFET VDS (V) at TJ max. 560 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) INFORMATION ORDERING Qgs (nC) Package Qgd (nC) Lead (Pb)-free 0.555 • Gate Charge Improved D S TO-220AB12 15 SiHP12N50C-E3 D2PAK TO-220 FULLPAK G (TO-263) G D TC = 25 °C GS C N-Channel MOSFET c S Pulsed Drain Current GD S S G D Package LIMITLead (Pb)-free S TO-220 FULLPAK S N-Channel MOSFET G S TO-220AB D2PAK (TO SiHP12N50C-E3 SiHB12N5 N-Channel MOSFET N-Channel MOSFET UNIT Package ± 30 Lead (Pb)-free Continuous Drain Current (T = 150 °C) at 10 V T = 100 °C SiHP12N50C, SiHB12N50C,VS SiHF12N50C Vishay Siliconix Linear Derating Factor S G D ORDERING INFORMATION 500 ABSOLUTE VDS MAXIMUM RATINGS (TC = 25 °C, unless otherwi ORDERING INFORMATION V G a S ORDERING INFORMATION G D VGS Package J D G TO-220 FULLPAK D2PAK (TO-263) TO220-AB SYMBOL D2PAK (TO-263) Gate-Source Voltage G D D • Compliant to RoHS Directive 2002/95/EC S GD S G rr SiHF12N50C-E3 S Drain-Source Voltage D2PAK (TO-263) S GDG D ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER GD S rr rr D2PAK (TO-263) • T /Q Improved rr rr SiHB12N50C-E3 Single TO-220AB TO-220 FULLPAK D2PAK (TO-263) D rr • 100 % Avalanche Tested 48 Configuration G TO-220 TO-220AB FULLPAK TO-220AB D D • Low Figure-of-Merit Ron x Qg ID IDM TO-220AB Lead (Pb)-free 12 SiHP12N50C-E3 7.5 PARAMETER A TO-220AB D2PAK (TO-263) SiHP12N50C-E3SiHB12N50C-E3 D2PAK (TO-263)TO- SiHB12N50C-E3SiHF 28 Drain-Source Voltage Note ABSOLUTE MAXIMUM (TC =otherwise 25 °C, unless ABSOLUTE MAXIMUM RATINGS (TC =RATINGS 25 °C, unless noted)otherwise noted 1.67 0.28 W/°C SiHP12N50C, SiHB12N50C, SiHF12N50C Single Pulse Avalanche Energy Gate-Source Voltage a. Limited by maximum junction temperature. LI mJ b. Vdd = 50 V, starting TJ = 25 °C, L = 2.5 mH, TC = 25 °C 25 Ω, Continuous Drain Current (TR °C)IaAS = 12 A. VGS at 10 V TO220-AB J g==150 208 36 W Maximum Power Dissipation P D 100 °C TC =SYMBO PARAMETER Package TO-220AB D2PAK (TO-263) TO-220 FULLPAK c. Repetitive rating; pulse width limited D by2PAK PARAMETER SYMBOL (TO-263 THERMAL RESISTANCE RATINGS - 55 to + 150 Operating Junction and Storage Temperature Range TJ, Tstg c maximum junction temperature. Pulsed Drain Current Lead (Pb)-free SiHP12N50C-E3 SiHB12N50C-E3 SiHF12N50C-E3 °C Drain-Source Voltage VDS 5 Drain-Source Voltage V d DS 2 for 10 s D PAK (TO-263) 300 Soldering Recommendations (Peak Temperature) PARAMETER SYMBOL TO220-AB TO-220 FULLPAK UNIT d. 1.6 mm from case. Linear Derating Factor Gate-Source Voltage VGS ± Gate-Source Voltage VGS Maximum Junction-to-Ambient RthJA 62 65 Notes Single Pulse Avalanche Energyb THERMAL RESISTANCE RATINGS(TC = 25 °C, unless otherwise noted) TC = 25 °C ABSOLUTE MAXIMUM RATINGS TC = 25 °C 1 a. Maximum Limited by maximum junction temperature. a Junction-to-Case (Drain) RthJC °C/W 0.6 3.5 Continuous Drain°C) Current (TJ = 150 °C)at VGS at 10 V ID ID a Continuous Drain Current (TJ Maximum = 150 VGS 10 V = 12 A. b.PARAMETER VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, R Power SYMBOL D2PAK (TO-263) TO-220 FULLPAK UNITDissipation g = 25 Ω, IAS TO220-AB TC = 100 °C LIMIT 7 TC = 100 °C a (PCB mount) RthJA c. Junction-to-Ambient Repetitive rating; pulse width limited by maximum junction temperature.40 c Maximum Junction-to-Ambient RthJA 62 65 Operating and Storage Temperature Range TO220-AB TO-220 IDM 2 Pulsed Drain CurrentJunction c d. 1.6 mm from case. IDM Pulsed Drain Current Note Note PARAMETER SYMBOL D2PAK (TO-263) FULLPAK UNIT Maximum Junction-to-Case (Drain) RthJC °C/W 0.6 3.5 Derating for 10 s Soldering Recommendations (Peak Temperature)d Linear Factor a. When mounted on 1" square PCB (FR-4 or G-10 material). Linear Derating Factor 1.67 a. When mounted on 1" square PCB 500 Drain-Source Voltage(PCB mount)a VDS Junction-to-Ambient RthJA 40 (FR-4 or G-10 material). EAS 1 Single Pulse b Avalanche Energy Notes V b EAS Single Pulse Avalanche Energy ± 30 Gate-Source Voltage VGS a. Power LimitedDissipation by maximum junction temperature. Note Maximum 208 PD Maximum Power Dissipation P SPECIFICATIONS (T = 25 °C, unless otherwise noted) D = 12 A. J = 50 V, starting T = 25 °C, L = 2.5 mH, R = 25 Ω, I b. V T = 25 °C 12 DD J g AS C a. When mounted on 1" square PCB (FR-4 or G-10 material). Continuous Drain Current (TJ = 150 °C)a V at 10 V ID Tstgt Operating Junction and Storage Temperature Range c. TYP. Repetitive rating; pulse width limited by maximum junction Storage Temperature Range TJ, Tstgtemperature. TJ-, 55 PARAMETER SYMBOLGS MIN. MAX. UNIT = 100CONDITIONS °C Operating Junction and 7.5 TCTEST A d d. Recommendations 1.6 mm from case.(Peak for 10 s Soldering Temperature) d c * Pb containing terminations are not RoHS compliant, exemptions may apply Static for 10 s 3 Soldering Recommendations IDM 28 (Peak Temperature) Pulsed Drain Current b ORDERING INFORMATION EAS 180 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Notes VGS = 0 V, Notes ID = 250 μA 500 - 0.28www.vishay.com V Drain-Source Breakdown VDS Document Number: 91388 Voltage Linear Derating Factor 1.67 W/°C PARAMETERB, 26-Apr-10 SYMBOL TEST CONDITIONS MIN. by TYP. MAX. UNITtemperature. S10-0969-Rev. 1 a. Limited maximum a. °C, Limited junction temperature. V Coefficient ΔVDS/TJ Reference to 25 mAmaximum - 180 0.6 - junction V/°C EIDAS= 1 by mJ Single Pulse Avalanche Energyb DS Temperature = 50 V, starting TJ = R 25 °C, L = 2.5 mH, R = 25 Ω, IAS = 12 A. b. VTDD Static b. V = 50 V, starting J = 25 °C, L = 2.5 mH, g = 25 Ω, IAS = 12 A.g Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = DD 250 3.0 5.0 V 208 36 W Maximum Power Dissipation PD μA c. Repetitive rating; pulse width limited by maximum junction temperature. by VGS = 0 V, c. ID =Repetitive 250 μA rating; pulse 500width limited - maximum V junction temperature. Drain-Source Breakdown Voltage VDS d. 1.6 , Tmm - 55 to +from 150 Operating Junction and Storage Temperature Range TJV Gate-Source Leakage IGSS VGS =d. ± 30 - mm - case. ± 100 nA 1.6 stg from case. °C VDS Temperature Coefficient ΔVDS /T Reference to 25 °C, I = 1 mA 0.6 V/°C J D for 10 V s DS = 500 V, VGS = 0 V Soldering Recommendations (Peak Temperature)d - 300 50 terminations are not RoHS compliant, exemptions may apply * Pb -containing Gate-Source Threshold VIGS(th) VDS = VGS, ID = 250 μA 3.0 5.0 V μA Zero Gate Voltage DrainVoltage Current(N) DSS VDS = 400 V, VGS = 0 V, TJ = 125 °C 250 Notes Document Number: 91388 Leakage junction temperature. IGSS VGS = ± 30 V ± 100 nA a.Gate-Source Limited by maximum S10-0969-Rev. Drain-Source On-State Resistance RDS(on) V = 10 V ID = 4 A 0.46 0.555B, 26-Apr-10 Ω 25 Ω, IAS = 12GSA. VDS = 500 V, VGS = b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 0V 50 μA GateTransconductance Voltage IDSS Forward gfs junction temperature. VDS = 50 V, ID = 3 A 3 S c.Zero Repetitive rating; Drain pulse Current width limited by maximum VDS = 400 V, VGS = 0 V, TJ = 125 °C 250 d. 1.6 mm from case. Dynamic * Pb containing areΩ not RoHS compliant, exemptions may apply Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4 A terminations - are 0.46 0.555 * Pb containing notterminations RoHS compliant, exemptions may apply Input Capacitance Ciss 1375 Forward Transconductance gfs VDS =VGS 50 = V,0IDV,= 3 A Number:Document 3 S Number: 91388 Document 91388 Output Capacitance Coss 165B, 26-Apr-10 pF VDS = 25 V, S10-0969-Rev. S10-0969-Rev. B, 26-Apr-10 Dynamic f = 1.0 MHz Reverse Transfer Capacitance Crss 17 Input Capacitance Ciss 1375 VGS = 0 V, Total Gate Charge Qg 32 48 Output Capacitance Coss 165 pF VDS = 25 V, * Pb containing Charge terminations are not RoHS compliant, may apply Gate-Source Qgs exemptions = 10 V f = 1.0 ID =MHz 10 A, VDS = 400 V 12 nC VGS Reverse Transfer Capacitance Crss 17 Document Number: www.vishay.com Gate-Drain Charge91388 Qgd 15 Total Gate Charge Qg 32 48 S10-0969-Rev. B, 26-Apr-10 1 18 Turn-On Delay Time td(on) Gate-Source Charge Qgs ID = 10 A, VDS = 400 V 12 nC VGS = 10 V 35 Rise Time tr VDD = 250 V, ID = 10 A Gate-Drain Charge Qgd 15 ns Rg = 4.3 Ω, VGS = 10 V 23 Turn-Off Delay Time td(off) Turn-On Delay Time td(on) 18 Fall Time tf 6 35 Rise Time tr VDD = 250 V, ID = 10 A ns Gate Input Resistance Rg f = 1 MHz, open drain 1.1 Ω = 4.3 Ω, V = 10 V R g GS 23 Turn-Off Delay Time td(off) Drain-Source Body Diode Characteristics Fall Time tf 6 MOSFET symbol Continuous Source-Drain Diode Current 12 Gate Input Resistance RISg f = 1 MHz, open drain -1.1 Ω showing the A Note integral reverse Drain-Source Body Diode Characteristics 28 Pulsed Diode Forward Current ISM p - n junction diode The information shown here is a preliminary MOSFET symbol Continuous Source-Drain Diode Current IS 12 product proposal, not a commercial product Body Diode Voltage VSD TJ = the 25 °C, IS = 10 A, VGS = 0 V 1.8 V showing A data sheet. Vishay Siliconix is not committed integral reverse Body Diode trr 580 ns toproduce this or any similar product. This -28 Pulsed DiodeReverse ForwardRecovery Current Time ISM p - n junction diode TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, information should not be used for design Body Diode Reverse Recovery Charge Qrr 4.3 μC = 10 20 A, V VGS = 0 V Body Diode Voltage VSD TJ = 25 °C,VISR = 1.8 V purposes, nor construed as an offer to Body Diode Reverse Recovery Current IRRM 13 A furnish or sellsuch products. Body Diode Reverse Recovery Time trr 580 ns Note TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, Body Diode Reverse Recovery Charge Qrr 4.3 μC V VR = 20product • The information shown here is a preliminary product proposal, not a commercial data sheet. Vishay Siliconix is not committed to Body Diode Reverse CurrentThis information IRRM should not be used for design purposes, nor construed 13 offer to -furnish or A sell produce this or any Recovery similar product. as an such products. Note • The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 D G Revision 26-Apr-10 MOSFETs - 500 V with Max RDS(on) of 0.555 Ω at VGS = 10 V Power MOSFE SiHP12N50C, SiH SiHP12N50C, SiHB12N50C FEATURES PRODUCT SUMMARY S D G S PRODUCT SHEET www.vishay.com 2/2 VMN-PT0217-1208 Document Number: 91388