AO4266 60V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 60V 10A RDS(ON) (at VGS=10V) < 15mΩ RDS(ON) (at VGS=4.5V) < 19mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications SOIC-8 Top View D D Bottom View D D D G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AO4266 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche energy L=0.1mH VDS Spike Power Dissipation B C 10µs TA=25°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev.1.0: June 2014 20 A EAS 20 mJ 72 V 3.1 Steady-State TJ, TSTG Steady-State RθJA RθJL W 2.0 Symbol t ≤ 10s A IAS PD Junction and Storage Temperature Range V 40 VSPIKE TA=70°C ±20 8 IDM Avalanche Current C Units V 10 ID TA=70°C C Maximum 60 -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.5 ±100 nA 2.0 2.5 V 12 15 20.5 25 19 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=9A 15 gFS Forward Transconductance VDS=5V, ID=10A 35 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 0.72 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz µA 5 VGS=10V, ID=10A Coss Units 60 VDS=60V, VGS=0V IDSS Max 0.7 mΩ mΩ S 1 V 4 A 1340 pF 123 pF 10 pF 1.5 2.3 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 21 30 nC Qg(4.5V) Total Gate Charge 9 15 nC Qgs Gate Source Charge 4.7 nC Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=10A VGS=10V, VDS=30V, RL=3.0Ω, RGEN=3Ω 2.5 ns 22 ns 2.5 ns IF=10A, dI/dt=500A/µs 15.5 Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 55.5 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: June 2014 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 4V 10V VDS=5V 4.5V 40 40 6V 3.5V 30 ID(A) ID (A) 30 20 20 10 10 VGS=3V 1 2 3 4 1 5 2 2 18 1.8 Normalized On-Resistance RDS(ON) (mΩ) 20 VGS=4.5V 14 12 VGS=10V 10 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 16 25°C 0 0 0 125°C VGS=10V ID=10A 1.6 1.4 1.2 VGS=4.5V ID=9A 1 0.8 8 0 3 6 9 12 0 15 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 1.0E+01 ID=10A 1.0E+00 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 30 20 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: June 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 VDS=30V ID=10A 1600 Ciss 1400 Capacitance (pF) VGS (Volts) 8 6 4 1200 1000 800 600 400 2 200 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 40 50 60 1000 TJ(Max)=150°C TA=25°C 1ms 1.0 10ms Power (W) 10µs 10µs 100µs RDS(ON) limited 10.0 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Coss Crss 100 10 TJ(Max)=150°C TA=25°C DC 0.0 0.01 1 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: June 2014 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: June 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5