AO4266

AO4266
60V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
60V
10A
RDS(ON) (at VGS=10V)
< 15mΩ
RDS(ON) (at VGS=4.5V)
< 19mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
SOIC-8
Top View
D
D
Bottom View
D
D
D
G
G
S
S
S
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4266
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Avalanche energy
L=0.1mH
VDS Spike
Power Dissipation
B
C
10µs
TA=25°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Rev.1.0: June 2014
20
A
EAS
20
mJ
72
V
3.1
Steady-State
TJ, TSTG
Steady-State
RθJA
RθJL
W
2.0
Symbol
t ≤ 10s
A
IAS
PD
Junction and Storage Temperature Range
V
40
VSPIKE
TA=70°C
±20
8
IDM
Avalanche Current C
Units
V
10
ID
TA=70°C
C
Maximum
60
-55 to 150
Typ
31
59
16
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°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.5
±100
nA
2.0
2.5
V
12
15
20.5
25
19
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=9A
15
gFS
Forward Transconductance
VDS=5V, ID=10A
35
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.72
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=10A
Coss
Units
60
VDS=60V, VGS=0V
IDSS
Max
0.7
mΩ
mΩ
S
1
V
4
A
1340
pF
123
pF
10
pF
1.5
2.3
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
21
30
nC
Qg(4.5V)
Total Gate Charge
9
15
nC
Qgs
Gate Source Charge
4.7
nC
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=30V, ID=10A
VGS=10V, VDS=30V, RL=3.0Ω,
RGEN=3Ω
2.5
ns
22
ns
2.5
ns
IF=10A, dI/dt=500A/µs
15.5
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
55.5
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2014
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
4V
10V
VDS=5V
4.5V
40
40
6V
3.5V
30
ID(A)
ID (A)
30
20
20
10
10
VGS=3V
1
2
3
4
1
5
2
2
18
1.8
Normalized On-Resistance
RDS(ON) (mΩ)
20
VGS=4.5V
14
12
VGS=10V
10
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
16
25°C
0
0
0
125°C
VGS=10V
ID=10A
1.6
1.4
1.2
VGS=4.5V
ID=9A
1
0.8
8
0
3
6
9
12
0
15
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
1.0E+01
ID=10A
1.0E+00
125°C
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ)
30
20
1.0E-02
25°C
1.0E-03
10
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: June 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
VDS=30V
ID=10A
1600
Ciss
1400
Capacitance (pF)
VGS (Volts)
8
6
4
1200
1000
800
600
400
2
200
0
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
30
40
50
60
1000
TJ(Max)=150°C
TA=25°C
1ms
1.0
10ms
Power (W)
10µs
10µs
100µs
RDS(ON)
limited
10.0
0.1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
ID (Amps)
Coss
Crss
100
10
TJ(Max)=150°C
TA=25°C
DC
0.0
0.01
1
0.0001 0.001 0.01
0.1
1
10
100
1000
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: June 2014
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: June 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5