AO4264 60V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS MV) technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 60V 12A RDS(ON) (at VGS=10V) < 11mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications SOIC-8 D Top View Bottom View D D D D G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AO4264 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche energy VDS Spike Power Dissipation B L=0.1mH C 10µs TA=25°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev.1.0: March 2014 36 A EAS 65 mJ 72 V 3.1 Steady-State Steady-State W 2.0 TJ, TSTG Symbol t ≤ 10s A IAS PD Junction and Storage Temperature Range V 48 VSPIKE TA=70°C ±20 9 IDM Avalanche Current C Units V 12 ID TA=70°C C Maximum 60 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA gFS Forward Transconductance VDS=5V, ID=12A 1.4 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=10A Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=12A ±100 nA 1.9 2.5 V 9.2 11 15.6 19 10.8 13.5 0.72 VGS=0V, VDS=30V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) µA mΩ mΩ 50 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance V 5 VGS=10V, ID=12A Static Drain-Source On-Resistance Units 1 TJ=55°C RDS(ON) Max 60 VDS=60V, VGS=0V IDSS Coss Typ 0.6 S 1 V 4 A 2007 pF 177 pF 12.5 pF 1.2 1.8 Ω 25.5 40 nC 11 20 nC 5.5 nC Gate Drain Charge 2.5 nC Turn-On DelayTime 8.5 ns VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω 3.5 ns 27 ns 3 ns IF=12A, dI/dt=500A/µs 15 Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 55 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: March 2014 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS=5V 3.5V 40 40 4.5V 30 125°C ID(A) ID (A) 30 VGS=3V 20 20 25°C 10 10 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 20 Normalized On-Resistance 2 15 RDS(ON) (mΩ) 2 VGS=4.5V 10 VGS=10V 5 1.8 VGS=10V ID=12A 1.6 1.4 VGS=4.5V ID=10A 1.2 1 0.8 0 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 1.0E+01 ID=12A 1.0E+00 20 1.0E-01 15 IS (A) RDS(ON) (mΩ) 125°C 125°C 1.0E-02 10 1.0E-03 25°C 25°C 5 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: March 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=30V ID=12A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1500 1000 500 Coss Crss 0 0 0 5 10 15 20 25 30 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 40 1000 10µs TJ(Max)=150°C TA=25°C 100µs 10µs RDS(ON) limited 1.0 Power (W) ID (Amps) 1ms 0.1 60 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 50 10ms 100 10 TJ(Max)=150°C TA=25°C DC 0.0 0.01 0.1 1 10 VDS (Volts) 100 1000 1 0.0001 0.001 0.01 ZθJA Normalized Transient Thermal Resistance 1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: March 2014 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: March 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5