AO6424A 30V N-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 6.5A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 35mΩ RDS(ON) (at VGS=4.5V) < 48mΩ Application • System/Load Switch TSOP6 Top View D Bottom View Top View D 1 6 D 2 5 D G 3 4 S D G S Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AO6424A TSOP-6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: October 2013 Steady-State Steady-State A 2.5 W 1.5 -55 to 150 TJ, TSTG Symbol t ≤ 10s V 27 PD TA=70°C ±20 5 IDM TA=25°C Power Dissipation B Units V 6.5 ID TA=70°C Maximum 30 RθJA RθJL Typ 42 68 23 www.aosmd.com °C Max 50 85 30 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.2 ±100 nA 1.8 2.4 V 29 35 44 53 48 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=4A 38 gFS Forward Transconductance VDS=5V, ID=5A 8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=5A Coss Units 30 VDS=30V, VGS=0V IDSS Max mΩ S 1 V 3 A 270 pF 50 pF 35 pF Ω 2.8 4.2 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6.3 12 nC Qg(4.5V) Total Gate Charge 3.2 8 nC VGS=10V, VDS=15V, ID=5A 1.4 mΩ Qgs Gate Source Charge 0.65 nC Qgd Gate Drain Charge 1.75 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 2.5 ns IF=5A, dI/dt=100A/µs 10 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 2.3 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=3Ω, RGEN=3Ω 2.5 ns 17.5 ns A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 10V 7V VDS=5V 4.5V 20 ID(A) ID (A) 10 4V 125°C 10 5 3.5V 25°C VGS=3V 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 60 Normalized On-Resistance 1.8 50 RDS(ON) (mΩ Ω) 2 VGS=4.5V 40 30 VGS=10V 20 VGS=10V ID=5A 1.6 1.4 1.2 VGS=4.5V ID=4A 1 0.8 10 0 2 4 6 0 8 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 100 1.0E+01 ID=5A 1.0E+00 125°C 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 80 60 1.0E-02 25°C 125°C 1.0E-03 40 1.0E-04 25°C 20 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=15V ID=5A 400 Capacitance (pF) VGS (Volts) 8 6 4 200 2 100 0 0 0 2 4 6 Ciss 300 8 Coss Crss 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TJ(Max)=150°C TA=25°C 10µs 10µs ID (Amps) RDS(ON) limited 100µs 1.0 1ms DC 10ms Power (W) 10.0 100 10 0.1 TJ(Max)=150°C TA=25°C 0.0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=85°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: October 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5