Datasheet

AO6424A
30V N-Channel MOSFET
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
6.5A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 35mΩ
RDS(ON) (at VGS=4.5V)
< 48mΩ
Application
• System/Load Switch
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
2
5
D
G
3
4
S
D
G
S
Pin1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO6424A
TSOP-6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: October 2013
Steady-State
Steady-State
A
2.5
W
1.5
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
V
27
PD
TA=70°C
±20
5
IDM
TA=25°C
Power Dissipation B
Units
V
6.5
ID
TA=70°C
Maximum
30
RθJA
RθJL
Typ
42
68
23
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°C
Max
50
85
30
Units
°C/W
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.2
±100
nA
1.8
2.4
V
29
35
44
53
48
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=4A
38
gFS
Forward Transconductance
VDS=5V, ID=5A
8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=5A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ
S
1
V
3
A
270
pF
50
pF
35
pF
Ω
2.8
4.2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.3
12
nC
Qg(4.5V) Total Gate Charge
3.2
8
nC
VGS=10V, VDS=15V, ID=5A
1.4
mΩ
Qgs
Gate Source Charge
0.65
nC
Qgd
Gate Drain Charge
1.75
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
2.5
ns
IF=5A, dI/dt=100A/µs
10
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
2.3
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=3Ω,
RGEN=3Ω
2.5
ns
17.5
ns
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
15
10V
7V
VDS=5V
4.5V
20
ID(A)
ID (A)
10
4V
125°C
10
5
3.5V
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
1
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
60
Normalized On-Resistance
1.8
50
RDS(ON) (mΩ
Ω)
2
VGS=4.5V
40
30
VGS=10V
20
VGS=10V
ID=5A
1.6
1.4
1.2
VGS=4.5V
ID=4A
1
0.8
10
0
2
4
6
0
8
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
100
1.0E+01
ID=5A
1.0E+00
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
80
60
1.0E-02
25°C
125°C
1.0E-03
40
1.0E-04
25°C
20
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: October 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
VDS=15V
ID=5A
400
Capacitance (pF)
VGS (Volts)
8
6
4
200
2
100
0
0
0
2
4
6
Ciss
300
8
Coss
Crss
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100.0
TJ(Max)=150°C
TA=25°C
10µs 10µs
ID (Amps)
RDS(ON)
limited
100µs
1.0
1ms
DC
10ms
Power (W)
10.0
100
10
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=85°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2013
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: October 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5