AON4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON4701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4701 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 160mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 1A, VF<[email protected] A A S G 1 2 3 4 8 7 6 5 VGS Gate-Source Voltage TA=25°C TA=70°C TA=25°C TA=70°C A TA=25°C TA=70°C Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±8 -3.4 V -2.7 A -15 IF PD Schottky -20 IFM B Power Dissipation MOSFET VKA Schottky reverse voltage Pulsed Forward Current ID IDM B Continuous Forward Current A S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Pulsed Drain Current K K K D D DFN3X2-8L Continuous Drain Current A D 20 1.9 V 1.2 A 1.7 7 0.96 1.1 0.62 -55 to 150 -55 to 150 °C Typ 49 81 37 Max 75 100 45 Units 60 89 40 75 130 50 W °C/W °C/W AON4701 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) gFS VSD IS Conditions Min ID=-250µA, VGS=0V VDS=-16V, VGS=0V -20 VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.4A -0.3 -15 TJ=125°C VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-1.5A VDS=-5V, ID=-3.4A Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current CT trr Qrr Junction Capacitance SchottkyReverse Recovery Time Schottky Reverse Recovery Charge Max -0.63 -1 -5 ±100 -1 4 Units V TJ=55°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ 73 102 95 123 7 -0.83 µA nA V A 90 125 120 160 mΩ mΩ -1 -2 S V A mΩ 540 72 49 12 pF pF pF Ω 6.1 0.6 1.6 10 12 44 22 nC nC nC ns ns ns ns IF=-3.8A, dI/dt=100A/µs IF=-3.8A, dI/dt=100A/µs 21 7.5 ns nC IF=0.5A VR=16V VR=16V, TJ=125°C 0.39 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3.8A VGS=-4.5V, VDS=-10V, RL=2.6Ω, RGEN=3Ω VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs 0.5 0.1 20 34 5.2 0.8 V mA pF 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0. December 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AON4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V -3.0V VDS=-5V -2.5V -8V 4 10 -ID(A) -ID (A) -2.0V 2 5 125°C VGS=-1.5V 25°C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 160 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 1.8 VGS=-1.8V 150 Normalized On-Resistance 140 130 RDS(ON) (mΩ) 165 120 VGS=-2.5V 110 100 90 VGS=-4.5V 80 70 VGS=-2.5V ID=-2.5A 1.6 VGS=-1.8V ID=-1.5A 1.4 VGS=-4.5V ID=-3.4A 1.2 1 60 50 0.8 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1E+01 1E+00 ID=-3.4A 1E-01 -IS (A) RDS(ON) (mΩ) 150 125°C 100 25°C 125°C 1E-02 25°C 1E-03 1E-04 1E-05 50 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AON4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-10V ID=-3.4A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 Crss 200 Coss 165 0 0 2 4 6 0 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 10μs RDS(ON) limited 10ms 1s DC 1 10 0 0.001 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 10 0.01 1 10 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=75°C/W PD 0.1 T on Single Pulse 0.01 0.00001 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 10 5 0.1 0.1 20 15 1ms 0.1s 15 T J(Max)=150°C T A=25°C 100μs Power (W) -ID (Amps) T J(Max)=150°C T A=25°C 1.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 5 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AON4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 100 1.0E+01 125°C f = 1MHz 80 Capacitance (pF) IF (Amps) 1.0E+00 1.0E-01 1.0E-02 60 40 20 25°C 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.5 1.0E-02 Leakage Current (A) 0.4 VF (Volts) 5 IF=0.5A 0.3 0.2 1.0E-03 VR=16V 1.0E-04 1.0E-05 1.0E-06 0.1 0 25 50 75 100 Temperature (°C) 125 0 150 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature 10 25 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000