AOP604 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, IF=3A, VF<0.5V@1A The AOP604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses.Standard Product AOP604 is Pb-free (meets ROHS & Sony 259 specifications). AOP604L is a Green Product ordering option. AOP604 and AOP604L are electrically identical. D2 PDIP-8 S1/A G1 S2 G2 1 2 3 4 D1/K D1/K D2 D2 8 7 6 5 D1 K N-ch P-ch G2 S2 G1 A S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 7.5 TA=25°C A Current TA=70°C 6 ID B Pulsed Drain Current IDM 30 TA=25°C TA=70°C Power Dissipation PD Junction and Storage Temperature Range TJ, TSTG Parameter Reverse Voltage Continuous Forward Current A Symbol VDS TA=25°C TA=70°C Pulsed Forward Current B Power Dissipation A TA=25°C TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ID IDM PD TJ, TSTG 2.5 1.6 -55 to 150 Max p-channel -30 ±20 -6.6 -5.3 -30 2.5 1.6 -55 to 150 Maximum Schottky 30 4 2.7 20 2.5 1.6 -55 to 150 Units V V A W °C Units V A W °C AOP604 Thermal Characteristics: n-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Thermal Characteristics: p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Thermal Characteristics: Schottky Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol RθJA RθJL Symbol RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 40 67 33 Max 50 80 40 Units °C/W °C/W °C/W Typ 38 66 30 Max 50 80 40 Units °C/W °C/W °C/W Typ 42 70 34 Max 50 80 40 Units °C/W °C/W °C/W A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4 : Jan 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AOP604 n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7.5A gFS Forward Transconductance VSD IS Schottky+ Body Diode Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time Qrr 1.8 VDS=5V, ID=7.5A 12 nA 3 V A 22.6 28 33 43 16 0.45 mΩ mΩ S 0.5 4 V A 680 pF VGS=0V, VDS=15V, f=1MHz 102 pF 77 pF VGS=0V, VDS=0V, f=1MHz 1.2 VGS=4.5V, VDS=15V, ID=7.5A Ω 13.84 nC 6.74 nC 1.82 nC 3.2 nC 4.6 ns VGS=10V, VDS=15V, RL=2.0Ω, RGEN=6Ω 4.1 ns 20.6 ns 5.2 ns IF=7.5A, dI/dt=100A/µs 16.5 ns Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs 7.8 nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 0.45 0.5 0.007 0.05 Irm VR=30V VR=30V, TJ=125°C 3.2 10 VR=30V, TJ=150°C 12 37 20 CT µA 100 TJ=125°C VGS=4.5V, ID=6.0A Units V 1 IGSS Crss Max 30 VDS=24V, VGS=0V VGS(th) DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance. (Schottky+FET) Coss Typ Maximum reverse leakage current Junction Capacitance Alpha Omega Semiconductor, Ltd. VR=15V V mA pF AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 25 20 6V 5V 4.5V VDS=5V 16 4V ID(A) ID (A) 20 15 3.5V 12 8 10 125°C 4 VGS=3V 5 25°C 0 0 0 1 2 3 4 0 5 0.5 Normalized On-Resistance 1.6 50 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 1.7 60 VGS=4.5V 40 30 20 VGS=10V VGS=10V ID=7.5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 10 0 5 10 15 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 60 ID=7.5A 1.0E+00 50 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 40 30 125°C 1.0E-01 1.0E-02 25°C 25°C 20 1.0E-03 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics MOSFET+Schottky 1.0 AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 1000 10 VDS=15V ID=7.5A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 Coss(FET+Schottky) 200 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 20 25 30 TJ(Max)=150°C TA=25°C 30 10µs 10ms 0.1s 1 15 40 Power W 100µs 1ms ID (Amps) 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AOP604 p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V 30 ±100 nA -2.4 V 28 35 37 45 VGS=-4.5V, ID=-5A 44 58 VDS=-5V, ID=-6.6A 13 TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time µA -5 -2 Static Drain-Source On-Resistance Coss Units V TJ=55°C VGS=-10V, ID=-6.6A IS Max -1 VDS=-24V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-6.6A VGS=-10V, VDS=-15V, RL=2.3Ω, RGEN=3Ω A -0.76 mΩ mΩ S -1 V -4.2 A 920 pF 190 pF 122 pF 3.6 Ω 18.5 nC 9.6 nC 2.7 nC 4.5 nC 7.7 ns 5.7 ns 20.2 ns 9.5 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-6.6A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs 8.8 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application application depends depends on theon user's the user's specific specific board board design. design. The current The current rating rating is based is based on theon t the ≤ 10s t ≤thermal 10s thermal resistance resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. s THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3 : Sept 2005 Alpha Omega Semiconductor, Ltd. AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -10V 25 -6V -5V VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V 15 -3.5V 10 15 10 125°C 5 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 60 1.5 2 2.5 3 3.5 4 4.5 5 1.60 Normalized On-Resistance 55 VGS=-4.5V 50 45 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 35 VGS=-10V 30 25 20 ID=-6.6A 1.40 VGS=-10V VGS=-4.5V 1.20 1.00 15 0.80 10 0 5 10 15 20 0 25 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 50 1.0E+01 65 1.0E+00 ID=-6.6A 60 1.0E-01 125°C 1.0E-02 50 125°C 45 -IS (A) RDS(ON) (mΩ) 55 1.0E-03 40 1.0E-04 35 25°C 30 25 25°C 1.0E-05 1.0E-06 0.0 20 3 -V6GS (Volts) 4 5 7 8 9 10 Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1500 10 VDS=-15V ID=-6.6A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 0.1s 1ms 10ms 1s 20 25 30 TJ(Max)=150°C TA=25°C 20 10 10s DC 0 0.001 0.1 0.1 15 30 Power (W) RDS(ON) limited 1.0 10 40 TJ(Max)=150°C, TA=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss 250 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz Capacitance (pF) 1 IF (Amps) 200 125°C 0.1 0.01 150 100 50 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.7 100 0.6 Leakage Current (mA) IF=3A 0.5 VF (Volts) 5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature Z θJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000