Dec 2002 AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its commondrain configuration. VDS (V) = 20V ID = 6 A RDS(ON) < 25mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) RDS(ON) < 40mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1 D2 D1/D2 S2 S2 G2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±8 V 30 1.5 W 1.08 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 5.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 6.4 TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W AO8806 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=16V, VGS=0V 20 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±8V VDS=VGS ID=250µA On state drain current VGS=4.5V, VDS=5V VGS=4.5V, ID=6A VGS(th) ID(ON) RDS(ON) gFS VSD IS Static Drain-Source On-Resistance 0.4 TJ=125°C VGS=2.5V, ID=5A VGS=1.8V, ID=4A VDS=5V, ID=5A Qgd tD(on) tr tD(off) tf trr Qrr VGS=0V, VDS=10V, f=1MHz Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=4.5V, VDS=10V, ID=6A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=5V, VDS=10V, RL=1.8Ω, RGEN=6Ω IF=6A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs Units V µA 0.6 100 1 nA V 19.3 27.6 24 25 35 30 mΩ 30.5 23 40 mΩ 0.76 1 2.5 30 Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Max 1 5 TJ=55°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Typ 15 A mΩ S 940 157 pF pF 133 pF 15 nC 1 4 nC nC 6.5 9 56.5 13.2 ns ns ns ns 22.4 8.4 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. V A AO8806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 8V VDS=5V 25 20 3V 15 125°C 16 12 2.5V 25°C ID(A) ID (A) 2V 4.5V VGS=1.5V 8 10 4 5 0 0 0 1 2 3 4 5 0 0.5 50 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 1.60 VGS=1.8V 40 30 VGS=2.5V 20 VGS=4.5V 10 VGS=2.5V ID=6A VGS=4.5V 1.40 VGS=1.8V 1.20 1.00 0 5 10 15 20 25 50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=6A 55 1.0E+00 50 45 125°C 1.0E-01 40 35 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 30 1.0E-02 25°C 1.0E-03 25 20 1.0E-04 25°C 15 1.0E-05 10 0 2 4 6 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO8806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=10V ID=6A VGS (Volts) 4 1750 1500 Ciss 1250 3 1000 2 750 Coss 500 1 Crss 250 0 0 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 TJ(Max)=150°C TA=25°C 40 RDS(ON) limited 100µs 1ms 0.1s TJ(Max)=150°C TA=25°C 30 10µs Power (W) ID (Amps) 100.0 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=83°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000