Jan 2003 AO4422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. VDS (V) = 30V ID = 11A RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 50 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 9.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 11 TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W AO4422 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=11A Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=11A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Crss Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime 1 Max V µA 1.8 100 3 nA V 12.6 16.8 19.6 15 21 24 mΩ 1 S V 4.3 A 40 TJ=125°C Units 1 5 TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Typ A 25 0.75 mΩ 1040 pF VGS=0V, VDS=15V, f=1MHz 180 110 pF pF VGS=0V, VDS=0V, f=1MHz 0.7 Ω 19.8 nC VGS=10V, VDS=15V, ID=11A 9.8 2.5 nC nC VGS=10V, VDS=15V, RL=1.35Ω, RGEN=3Ω 3.5 4.5 3.9 17.4 3.2 17.5 nC ns ns ns ns Turn-Off Fall Time IF=11A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs 7.6 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4V 10V 25 20 3.5V 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 VGS=3V 25°C 4 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 Normalized On-Resistance 1.6 22 VGS=4.5V 20 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 24 18 16 14 VGS=10V 12 10 VGS=10V ID=10A 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 1.0E+00 50 ID=10A 1.0E-01 40 IS (A) RDS(ON) (mΩ) 2.5 30 25°C 1.0E-03 125°C 20 125°C 1.0E-02 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=11A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 250 0 Crss 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 50 RDS(ON) limited 100µs 10ms 0.1s 1s 1.0 TJ(Max)=150°C TA=25°C DC 1 10 100 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 30 30 0 0.001 VDS (Volts) 10 25 10 10s 0.1 0.1 20 TJ(Max)=150°C TA=25°C 40 10µs 1ms 10.0 Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000