AON7409

AON7409
30V P-Channel MOSFET
General Description
Product Summary
• The AON7409 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
• RoHS and Halogen-Free Compliant.
VDS
-30V
-32A
RDS(ON) (at VGS=-10V)
< 8.5mΩ
RDS(ON) (at VGS =-4.5V)
< 17mΩ
Typical ESD protection
HBM Class 3A
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
Pin 1
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
G
C
V
A
-128
-16
IDSM
TA=70°C
±25
-25
IDM
TA=25°C
Units
V
-32
ID
TC=100°C
Maximum
-30
A
-12.5
Avalanche Current C
IAS
40
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
80
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.1.0: Sepetember 2014
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
38.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
96
PD
TC=100°C
-55 to 150
Typ
30
60
1
°C
Max
40
75
1.3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1.6
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-128
±10
uA
V
6.8
8.5
9.6
11.5
VGS=-4.5V, ID=-10A
12.8
17
mΩ
-1
V
-32
A
TJ=125°C
A
gFS
Forward Transconductance
VDS=-5V, ID=-16A
-43
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.7
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
-2.7
Static Drain-Source On-Resistance
Output Capacitance
Units
-2.1
VGS=-10V, ID=-16A
Coss
Max
V
VDS=-30V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
S
2142
pF
474
pF
363
VGS=0V, VDS=0V, f=1MHz
mΩ
2.3
pF
4.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
41
58
nC
Qg(4.5V) Total Gate Charge
18.5
27
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-16A
VGS=-10V, VDS=-15V, RL=0.9Ω,
RGEN=3Ω
15
nC
6
nC
13
ns
12
ns
34
ns
tf
Turn-Off Fall Time
18.5
ns
trr
Body Diode Reverse Recovery Time
IF=-16A, dI/dt=500A/µs
17.5
Qrr
Body Diode Reverse Recovery Charge IF=-16A, dI/dt=500A/µs
44.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: Sepetember 2014
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Page 2 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
-10V
-7V
VDS=-5V
-5V
-4.5V
60
-ID(A)
-ID (A)
60
40
40
-4V
25°C
125°C
20
20
VGS=-3.5V
0
0
0
1
2
3
4
0
5
2
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
18
1.6
Normalized On-Resistance
16
14
RDS(ON) (mΩ)
1
12
VGS=-4.5V
10
8
6
VGS=-10V
4
2
VGS=-10V
ID=-16A
1.4
17
5
2
VGS=-4.5V
ID=-10A 10
1.2
1
0.8
0
0
5
0
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
30
ID=-16A
1.0E+01
-IS (A)
25
RDS(ON) (mΩ)
20
15
40
125°C
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
10
1.0E-03
5
25°C
1.0E-04
0
2
4
6
8
10
1.0E-05
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: Sepetember 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=-10V
ID=-16A
2500
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
2000
1500
1000
Coss
500
Crss
0
0
0
10
20
30
40
50
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
RDS(ON)
limited
10.0
TJ(Max)=150°C
TC=25°C
10µs
100µs
DC
1.0
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
Power (W)
10µs
100.0
-ID (Amps)
10
160
17
5
2
10
120
80
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
(Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.3 °C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: Sepetember 2014
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Page 4 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000
100
TA=150°C
10
TA=125°C
1
80
60
40
20
0
1
10
100
1000
0
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
75
125
150
10000
40
35
TA=25°C
1000
30
25
Power (W)
-Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
20
15
17
5
2
10
100
10
10
5
1
1E-05
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: Sepetember 2014
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Page 5 of 6
AON7409
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: Sepetember 2014
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6