AOSMD AON7407

AON7407
20V P-Channel MOSFET
General Description
Product Summary
The AON7407 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
-20V
ID (at VGS=-4.5V)
-40A
RDS(ON) (at VGS =-4.5V)
< 9.5mΩ
RDS(ON) (at VGS =-2.5V)
< 12.5mΩ
RDS(ON) (at VGS =-1.8V)
< 18mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3_EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
-29
-14.5
IDSM
TA=70°C
±8
-100
IDM
TA=25°C
Units
V
-40
ID
TC=100°C
Maximum
-20
A
-11.5
Avalanche Current C
IAS, IAR
-40
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
80
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev 0: June 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
12
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
29
PD
-55 to 150
Typ
30
60
3.5
°C
Max
40
75
4.2
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7407
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±8V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-100
TJ=55°C
±100
VGS=-2.5V, ID=-13A
9.3
12.5
mΩ
VGS=-1.8V, ID=-11A
11.4
18
mΩ
-1
V
-35
A
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
Turn-Off Fall Time
72
-0.52
S
3495
4195
pF
365
528
690
pF
255
425
595
pF
2.8
5.6
Ω
44
53
nC
35
VGS=-4.5V, VDS=-10V, ID=-14A
VGS=-4.5V, VDS=-10V,
RL=0.75Ω, RGEN=3Ω
9
nC
11
nC
18
ns
32
ns
136
ns
59
IF=-14A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
I
Body Diode Reverse Recovery Charge F=-14A, dI/dt=500A/µs
mΩ
2795
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
V
A
13.5
VSD
Rg
nA
10.5
TJ=125°C
VDS=-5V, ID=-14A
Reverse Transfer Capacitance
-0.9
9.5
Forward Transconductance
Crss
-0.55
7.6
gFS
Output Capacitance
µA
-5
VGS=-4.5V, ID=-14A
Coss
Units
-1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
26
80
33
100
ns
40
120
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: June 2011
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Page 2 of 6
AON7407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
-8V
VDS=-5V
-2.5V
80
-3V
-1.8V
40
60
-ID(A)
-ID (A)
-4.5V
-1.5V
40
20
125°C
20
25°C
VGS=-1V
0
0
0
1
2
3
4
5
0
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
1.5
2
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
14
1.6
Normalized On-Resistance
VGS=-1.8V
12
RDS(ON) (mΩ )
0.5
10
VGS=-2.5V
8
VGS=-4.5V
6
4
VGS=-4.5V
ID=-14A
1.4
V17
GS=-2.5V
ID5
=-13A
1.2
2
VGS=-1.8V
10
ID=-11A
1
0.8
0
5
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
25
50
75
100 125 150
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
175
1.0E+02
ID=-14A
1.0E+01
20
40
15
-IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
10
125°C
25°C
1.0E-01
1.0E-02
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: June 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note
E)
Page 3 of 6
AON7407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
5
VDS=-10V
ID=-14A
3500
Capacitance (pF)
-VGS (Volts)
4
3
2
Ciss
3000
2500
2000
1500
Coss
1000
1
500
0
0
0
10
20
30
40
0
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
200
1000.0
10µs
100.0
RDS(ON)
limited
10.0
10µs
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
160
Power (W)
-ID (Amps)
Crss
17
5
2
10
120
80
40
0.1
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.0001
0.001
0.01
0.1
0
1
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating
Junction-to-Case (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=4.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
pulse
1
0.1
PD
Single Pulse
0.01
0.00001
0.0001
Ton
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: June 2011
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Page 4 of 6
AON7407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
TA=25°C
100
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=150°C
TA=125°C
30
20
10
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
TA=25°
C
40
1000
30
Power (W)
-Current rating ID(A)
50
0
20
17
5
2
10
100
10
10
0
0
25
50
75
100
125
1
0.00001
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0
0.001
0.1
10
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating
Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
pulse
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: June 2011
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Page 5 of 6
AON7407
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t off
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR = 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & W aveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: June 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6