AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 72A RDS(ON) (at VGS=10V) < 8.0mΩ (< 7.6mΩ∗) 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Bottom View Top View D Bottom View D D D D G G D S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Units V ±20 V A 180 11 IDSM TA=70°C Maximum 60 54 IDM TA=25°C S 72 ID TC=100°C C S G G A 8.5 Avalanche Current C IAS 50 A Avalanche energy L=0.1mH C TC=25°C EAS 125 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 50 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 100 PD -55 to 175 Typ 12 48 1.2 °C Max 15 60 1.5 Units °C/W °C/W °C/W * Surface mount package TO263 Rev 1 : Mar. 2012 www.aosmd.com Page 1 of 6 AOT2608L/AOB2608L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 2.6 ID(ON) On state drain current VGS=10V, VDS=5V 180 VGS=10V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125°C Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime ±100 nA 3.6 V 6.6 8 11.4 14 6.3 7.6 mΩ 1 V 72 A A mΩ 75 VGS=0V, VDS=30V, f=1MHz S 2995 pF 270 pF 10.5 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 3.1 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Crss V 5 IGSS TO220 VGS=10V, ID=20A TO263 Units 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V VGS(th) RDS(ON) Typ VGS=10V, VDS=30V, ID=20A VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 0.3 pF 0.6 0.9 38.5 55 Ω nC 14 nC 3.5 nC 15 ns 10 ns 25 ns tf Turn-Off Fall Time 2.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 24 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 115 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : Mar. 2012 www.aosmd.com Page 2 of 6 AOT2608L/AOB2608L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V VDS=5V 6V 100 80 7V 80 60 ID(A) ID (A) 5V 60 40 125°C 40 25°C 20 Vgs=4.5V 20 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 2.4 Normalized On-Resistance RDS(ON) (mΩ Ω) 10 3 8 6 VGS=10V 2.2 VGS=10V ID=20A 2 1.8 17 5 2 10 1.6 1.4 1.2 1 0.8 4 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 18 1.0E+02 ID=20A 1.0E+01 40 125°C 1.0E+00 12 IS (A) RDS(ON) (mΩ Ω) 15 125°C 1.0E-01 1.0E-02 9 1.0E-03 25°C 6 1.0E-04 25°C 1.0E-05 3 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1 : Mar. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT2608L/AOB2608L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 VDS=30V ID=20A 3000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2500 2000 1500 Coss 1000 2 500 Crss 0 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 10µs 10µs RDS(ON) limited 100µs 10.0 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 400 Power (W) ID (Amps) 60 500 1000.0 100.0 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1 : Mar. 2012 www.aosmd.com Page 4 of 6 AOT2608L/AOB2608L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C TA=125°C 100 80 60 40 20 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 1000 80 TA=25°C 60 50 100 Power (W) Current rating ID(A) 70 40 30 17 5 2 10 10 20 10 0 1 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0100 0.1 1 10 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 0.001 0.01 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1 : Mar. 2012 www.aosmd.com Page 5 of 6 AOT2608L/AOB2608L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1 : Mar. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6