AON6230

AON6230
40V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6230 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
40V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.44mΩ
RDS(ON) (at VGS=4.5V)
< 2.1mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: February 2013
IAS
90
A
EAS
405
mJ
104
Steady-State
Steady-State
W
42
7.4
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
A
45.5
PDSM
TA=70°C
A
57.5
PD
TC=100°C
V
235
IDSM
TA=70°C
±20
66
IDM
TA=25°C
Continuous Drain
Current
Units
V
85
ID
TC=100°C
Maximum
40
-55 to 150
Typ
14
40
1
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°C
Max
17
55
1.2
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6230
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
235
TJ=55°C
±100
nA
1.75
2.3
V
1.22
1.44
1.74
2.1
VGS=4.5V, ID=20A
1.62
2.1
mΩ
1
V
85
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
124
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.67
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=20A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
40
VDS=40V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=20V, f=1MHz
mΩ
S
6050
pF
1640
pF
105
pF
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
81
114
nC
Qg(4.5V)
Total Gate Charge
35
50
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
0.5
nC
14
nC
13
nC
12
ns
6.5
ns
59
ns
tf
Turn-Off Fall Time
11.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
28
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
98
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2013
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Page 2 of 6
AON6230
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
4.5V
VDS=5V
80
80
10V
60
ID(A)
ID (A)
60
3V
40
40
125°C
20
20
VGS=2.5V
25°C
0
0
0
1
2
3
4
0
5
2
2
3
4
5
6
1.6
1.8
Normalized On-Resistance
VGS=4.5V
1.6
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.4
1.2
VGS=10V
1
0.8
0.6
0.4
VGS=10V
ID=20A
1.4
17
5
2
VGS=4.5V
10
ID=20A
1.2
1
0.8
0
5
10
15
20
25
30
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
4
1.0E+02
ID=20A
1.0E+01
40
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
3
125°C
2
125°C
1.0E-01
1.0E-02
104
25°C
41.5
1.0E-03
1
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: February 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6230
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8000
VDS=20V
ID=20A
7000
Ciss
8
Capacitance (pF)
VGS (Volts)
6000
6
4
5000
Coss
4000
3000
2000
2
Crss
1000
0
0
0
10
20
30
40
50
60
70
80
90
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
10µs
DC
40
100µs
1ms
10ms
10.0
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
400
10µs
Power (W)
ID (Amps)
30
500
1000.0
100.0
20
VDS (Volts)
Figure 8: Capacitance Characteristics
17
5
2
10
300
200
100
0.0
0.01
0.1
1
10
100
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
(Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.2°C/W
1
0.1
104
41.5
Single Pulse
PD
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: February 2013
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Page 4 of 6
AON6230
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
TA=25°C
100
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=150°C
TA=125°C
10
1
120
90
60
30
0
1
10
100
1000
0
25
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
100
TA=25°C
80
1000
Power (W)
Current rating ID(A)
50
60
40
17
5
2
10
100
10
20
1
1E-05
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
104
41.5
0.01
PD
Ton
Single Pulse
0.001
0.0001
0.001
0.01
T
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: February 2013
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Page 5 of 6
AON6230
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Vgs
L
Isd
t rr
IF
dI/dt
+ Vdd
I RM
Vdd
VDC
-
Vds
1
Rev.1.0: February 2013
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1.2
Page 6 of 6