AON6596

AON6596
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
35A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 7.5mΩ
RDS(ON) (at VGS=4.5V)
< 10.5mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
DFN5X6
D
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
PIN1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6596
DFN 5X6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
TA=25°C
Avalanche energy
VDS Spike
L=6mH
L=0.05mH
C
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
20
A
IAS
32*
A
EAS
26*
mJ
VSPIKE
36
V
41
5
Symbol
Steady-State
Steady-State
RθJA
RθJC
W
3.2
TJ, TSTG
t ≤ 10s
W
16
PDSM
Junction and Storage Temperature Range
A
16
PD
TA=25°C
V
120
IDSM
Avalanche Current C
±20
30
IDM
TA=70°C
Units
V
35
ID
TC=100°C
C
Maximum
30
-55 to 150
Typ
20
45
2.4
°C
Max
25
55
3
Units
°C/W
°C/W
°C/W
*L=0.1mH, IAS=24A, EAS=29mJ, Starting TJ=25°C.
Rev.1.0: March 2014
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.5
±100
nA
1.95
2.5
V
6.2
7.5
9.7
11.7
10.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
8.4
gFS
Forward Transconductance
VDS=5V, ID=20A
67
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
TJ=125°C
0.72
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
mΩ
S
1
V
35
A
1150
pF
180
pF
105
pF
1.1
1.7
Ω
20
30
nC
Qg(4.5V) Total Gate Charge
9.5
15
Gate Source Charge
Qgd
Gate Drain Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, ID=20A
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
0.5
mΩ
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
f=1MHz
µA
5
VGS=10V, ID=20A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
nC
2.7
nC
5
nC
2.7
nC
5
nC
6.5
ns
2
ns
17
ns
3.5
ns
IF=20A, dI/dt=500A/µs
8.7
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
13.5
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4.5V
VDS=5V
4V
80
80
3.5V
60
ID(A)
ID (A)
60
40
125°C
40
20
20
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
1
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
12
2
Normalized On-Resistance
10
VGS=4.5V
RDS(ON) (mΩ)
2
8
6
VGS=10V
4
2
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
1.0E+02
ID=20A
1.0E+01
20
15
125°C
IS (A)
RDS(ON) (mΩ)
1.0E+00
125°C
1.0E-01
1.0E-02
10
25°C
1.0E-03
5
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: March 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=20A
1400
Ciss
8
Capacitance (pF)
VGS (Volts)
1200
6
4
2
1000
800
Coss
600
400
200
0
Crss
0
0
5
10
15
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
500
RDS(ON)
limited
10.0
100µs
DC
1.0
1ms
10ms
300
200
100
TJ(Max)=150°C
TC=25°C
0.0
0.01
TJ(Max)=150°C
TC=25°C
400
10µs
Power (W)
10µs
100.0
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
0.1
10
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: March 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
40
Current rating ID(A)
Power Dissipation (W)
30
30
20
10
20
10
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
100
T
1000
10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: March 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: March 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6