® ISO 9001 Registered Process C3013 CMOS 3µm 10 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.6 Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Interpoly Oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res. Metal-1 Sheet Resistance Passivation Thickness Symbol ρP-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TP1P2 ρPOLY1 ρPOLY2 ρM1 TPASS Minimum 3.2 16 Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Poly-1 to Poly-2 Symbol COX CM1P CM1S CP1P2 Minimum 0.66 © IMP, Inc. 42 2.85 Typical 0.8 0.6 47 3.2 0.7 Maximum 1.0 Typical –0.8 0.55 15 3.2 0.9 Maximum –1.0 Typical 4.8 21 0.8 80 0.7 48 60 22 22 30 200+900 Maximum 6.5 27 Typical 0.72 0.0523 0.030 0.57 Maximum 0.78 52 3.55 12 12 13 2.85 19 3.55 –12 –12 50 44 15 15 0.026 0.51 100 52 30 30 60 0.034 0.63 Unit V V1/2 µA/V2 µm µm V V Comments 100x4µm 100x4µm 100x100µm 100x4µm Per side Unit V V1/2 µA/V2 µm µm V V Comments 100x4µm 100x4µm 100x100µm 100x4µm Per side Unit KΩ/o Ω/o µm Ω/o µm nm nm Ω/o Ω/o mΩ/o nm Comments P-well Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 oxide+nit. Comments 85 Process C3013 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Metal-1 Width/Space Gate Poly Width/Space N <100> 15 - 25 Ω-cm 5V P-well 1 2 2.0x2.0µm 3.5 / 2.5µm 4.0 / 2.5µm N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 3.0 / 3.0µm 12µm 2.5µm 1.5µm 1.0µm 1.0µm 100x100µm 55µm 80.0µm Special Feature of C3013 Process: P-well analog process with single metal CMOS 3.0 µm technology for 10 Volt applications. 86 C3013-4-98