® ISO 9001 Registered Process C3025 CMOS 3µm 10 Volt Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.65 P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.7 Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Interpoly Oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res. Metal-1 Sheet Resistance Passivation Thickness Symbol ρP-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TP1P2 ρPOLY1 ρPOLY2 ρM1 TPASS Minimum 3.25 13 Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Poly-1 to Poly-2 Symbol COX CM1P CM1S CP1P2 Minimum 0.68 0.047 0.027 0.453 © IMP, Inc. 40 3.05 Typical 0.85 0.87 48 3.40 0.550 Maximum 1.05 Typical –0.9 0.75 16 3.35 0.8 Maximum –1.1 Typical 5.25 20 0.8 80 0.7 48 66 22 22 50 200+900 Maximum 7.25 27 Typical 0.72 0.0523 0.30 0.523 Maximum 0.78 0.0575 0.034 0.617 56 3.75 16.5 12 13 3.00 19 3.70 –16.5 –12 50 45 56 15 15 100 51 76 30 30 Unit V V1/2 µA/V2 µm µm V V Comments 100x4µm 100x4µm 100x100µm 100x4µm Per side Unit V V1/2 µA/V2 µm µm V V Comments 100x4µm 100x4µm 100x100µm 100x4µm Per side Unit KΩ/o Ω/o µm Ω/o µm nm nm Ω/o Ω/o mΩ/o nm Comments P-well Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 Comments oxide+nit. 93 Process C3025 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Metal-1 Width/Space Gate Poly Width/Space P <100> 15 - 25 Ω-cm 10V P-well 1 2 2.0x2.0µm 3.5 / 2.5µm 3.0 / 3µm N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Active Contact Overlap Of Poly Metal-1 Overlap Of Contact Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch Special Feature of C3025 Process: 10 Volt P-well single metal analog process. 94 C3025-4-98 3.0 / 3.0µm 12µm 2.5µm 1.5µm 1.0µm 1.0µm 100x100µm 5.0µm 80.0µm