HFP80N75

Shantou Huashan Electronic Devices Co.,Ltd.
HFP80N75
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
TO-220
• Servo motor control.
• Power MOSFET gate drivers.
• DC/DC converters
• Other switching applications.
█ Features
1- G 2-D 3-S
80A, 75V(See Note), RDS(on) <11mVΩ@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Minimize input capacitance and gate charge
• Equivalent Type:ME80N75
•
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
T stg ——Storage Temperature ------------------------------------------------------ -55~150℃
T j ——Operating Junction Temperature -------------------------------------------------- 150℃
V D S S —— Drain-Source Voltage ----------------------------------------------------------75V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 80A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 300A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 100W
Derate Above 25℃ ------------------------------------------------------------------------- 2.0W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 400mJ
█ Thermal Characteristics
Symbol
Rthj-case
Items
Thermal Resistance Junction-case
TO-220
Max 2.0
Unit
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max 62.5
℃/W
HFP80N75
Shantou Huashan Electronic Devices Co.,Ltd.
█ Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
Items
Min.
Typ.
Max.
Unit
Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate – Body Leakage
On Characteristics
Gate Threshold Voltage
VGS(th)
75
2.0
RDS(on)
Static Drain-Source On-Resistance
Dynamic Characteristics and Switching Characteristics
1
V
μA
ID=250μA ,VGS=0V
VDS =75V, VGS=0V
10
±100
μA
nA
VDS =75V, VGS=0V,Tj=125℃
VGS= ±20V , VDS =0V
4.0
V
11
mΩ VGS=10V, ID=40A (Note 3)
Ciss
Input Capacitance
6200
pF
Coss
Output Capacitance
437
pF
Crss
Reverse Transfer Capacitance
144
pF
td(on)
Turn - On Delay Time
60
nS
Rise Time
43
nS
Turn - Off Delay Time
159
nS
Fall Time
47
nS
Qg
Total Gate Charge
27
nC
Qgs
Gate–Source Charge
36
nC
Qgd
Gate–Drain Charge
50
nC
Gate Resistance
0.8
Ω
tr
td(off)
tf
Rg
Drain-Source Diode Characteristics and Maximun Ratings
Continuous Source–Drain Diode
IS
Forward Current
Pulsed
Drain-Source
Diode
ISM
Forward Current
Source–Drain Diode Forward
VSD
On–Voltage
80
A
300
A
1.5
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. ID=30A, VDD=37.5V, Starting TJ=25℃
3. Pulse Test: Pulse width≤300μS, Duty Cycle≤2%
VDS = VGS , ID=250μA
VDS = 20 V, VGS = 0V,
f = 1.0 MHz
VDS = 30V, VGS = 10 V,
RL =15Ω,RG= 10 Ω
(Note 3)
VDS=60V, ID=75A,
VGS = 4.5 V (Note 3)
f=1MHz
IS=40A,VGS=0(Note 3)
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP80N75
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP80N75
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP80N75
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP80N75