N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF630 █ APPLICATIONSL TO-220F High Voltage High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） 1 T stg ——Storage Temperature……………………………－55~150℃ T j ——Operating Junction Temperature …………………………150℃ 1―G PD —— Allowable Power Dissipation（T c=25℃）…………………38W 2―D 3―S VDSS —— Drain-Source Voltage ………………………………… 200V VDGR —— Drain-Gate Voltage (RGS=1MΩ) ……………………500V VGSS —— Gate-Source Voltage …………………………………±30V ID —— *Drain Current（Tc=25℃）…………………………………9.0A * Drain current limited by maximumjunction temperature █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVDSS IDSS Characteristics Min Typ Max Unit Test Conditions Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 200 2.0 VGS(th) Gate –Source Leakage Current Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance ０．３４ ０．４ ? Forward Transconductance ７．０５ S Input Capacitance Output Capacitance ５５０ ７２０ VDS = 40V , ID =4.5A * pF 85 110 pF VDS =25V, VGS=0,f=1ＭＨｚ Reverse Transfer Capacitance 22 29 pF Turn - On Delay Time 11 30 nS Rise Time 70 150 nS Turn - Off Delay Time 60 130 nS Fall Time 65 140 nS Qg Total Gate Charge 22 29 nC VDD =100V, ID =9A RG= 25 Ω * ＶＤＳ ＝０．８ＶＤＳＳ Qgs Gate–Source Charge 3.6 nC ＶＧＳ＝１０Ｖ Qgd Gate–Drain Charge 10.2 nC ＩＤ＝９．０Ａ ＊ ９．０ Ａ １．５ Ｖ ３．３３ ℃／Ｗ IGSS gfs Ciss Coss Crss td(on) tr td(off) tf Is Continuous Source Current Diode Forward Voltage Thermal Resistance， Rth（j-c） Junction-to-Case *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% VSD １０ V ID=250μA ,VGS=0V μＡ VDS =200V，VGS=0 ±100 ｎＡ VGS=±30V , VDS =0V 4.0 V VDS = VGS , ID =250μA VGS=10V, ID =4.5A IS =9.0A , VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630