HUASHAN HFF630

N-Channel MOSFET
Shantou Huashan Electronic Devices Co.,Ltd.
HFF630
█ APPLICATIONSL
TO-220F
High Voltage High-Speed Switching.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
1
T stg ——Storage Temperature……………………………-55~150℃
T j ——Operating Junction Temperature …………………………150℃ 1―G
PD —— Allowable Power Dissipation(T c=25℃)…………………38W
2―D
3―S
VDSS —— Drain-Source Voltage ………………………………… 200V
VDGR —— Drain-Gate Voltage (RGS=1MΩ) ……………………500V
VGSS —— Gate-Source Voltage …………………………………±30V
ID ——
*Drain Current(Tc=25℃)…………………………………9.0A
* Drain current limited by maximumjunction temperature
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol BVDSS
IDSS
Characteristics Min Typ Max Unit Test Conditions Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
200
2.0
VGS(th)
Gate –Source Leakage Current
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
0.34 0.4 ? Forward Transconductance
7.05 S
Input Capacitance
Output Capacitance
550 720 VDS = 40V , ID =4.5A *
pF 85
110
pF
VDS =25V, VGS=0,f=1MHz Reverse Transfer Capacitance
22
29
pF
Turn - On Delay Time
11
30
nS
Rise Time
70
150
nS
Turn - Off Delay Time
60
130
nS
Fall Time
65
140
nS
Qg
Total Gate Charge
22
29
nC
VDD =100V,
ID =9A
RG= 25 Ω * VDS =0.8VDSS
Qgs
Gate–Source Charge
3.6
nC
VGS=10V
Qgd
Gate–Drain Charge
10.2
nC
ID=9.0A *
9.0 A 1.5 V 3.33 ℃/W IGSS
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Is
Continuous Source Current
Diode Forward Voltage
Thermal Resistance,
Rth(j-c)
Junction-to-Case
*Pulse Test:Pulse Width≤300μs,Duty Cycle≤2%
VSD
10 V
ID=250μA ,VGS=0V
μA VDS =200V,VGS=0 ±100 nA VGS=±30V , VDS =0V 4.0
V
VDS = VGS , ID =250μA
VGS=10V, ID =4.5A IS =9.0A , VGS=0
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630