N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP630 █ APPLICATIONSL TO-220 High Voltage High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg ——Storage Temperature……………………………-55~150℃ T j ——Operating Junction Temperature …………………………150℃ 1―G PD —— Allowable Power Dissipation(T c=25℃)…………………72W 2―D 3―S VDSS —— Drain-Source Voltage ………………………………… 200V VDGR —— Drain-Gate Voltage (RGS=1MΩ) ……………………500V VGSS —— Gate-Source Voltage …………………………………±30V ID —— *Drain Current(Tc=25℃)…………………………………9.0A * Drain current limited by maximumjunction temperature █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol BVDSS IDSS Characteristics Min Typ Max Unit Test Conditions Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 200 2.0 VGS(th) Gate –Source Leakage Current Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance 0.34 0.4 ? Forward Transconductance 7.05 S Input Capacitance Output Capacitance 550 720 VDS = 40V , ID =4.5A * pF 85 110 pF VDS =25V, VGS=0,f=1MHz Reverse Transfer Capacitance 22 29 pF Turn - On Delay Time 11 30 nS Rise Time 70 150 nS Turn - Off Delay Time 60 130 nS Fall Time 65 140 nS Qg Total Gate Charge 22 29 nC VDD =100V, ID =9A RG= 25 Ω * VDS =0.8VDSS Qgs Gate–Source Charge 3.6 nC VGS=10V Qgd Gate–Drain Charge nC ID=9.0A * 9.0 A 1.5 V IGSS gfs Ciss Coss Crss td(on) tr td(off) tf Is VSD Continuous Source Current 10.2 Diode Forward Voltage *Pulse Test:Pulse Width≤300μs,Duty Cycle≤2% 10 V ID=250μA ,VGS=0V μA VDS =200V,VGS=0 ±100 nA VGS=±30V , VDS =0V 4.0 V VDS = VGS , ID =250μA VGS=10V, ID =4.5A IS =9.0A , VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630