IFN5432 - InterFET Corporation

Databook.fxp 1/13/99 2:09 PM Page B-45
B-45
01/99
IFN5432, IFN5433, IFN5434
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Analog Low On Resistance
Switches
¥ Choppers
IFN5432
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Min
V(BR)GSS
– 25
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
–4
Drain Saturation Current (Pulsed)
IDSS
150
ID(OFF)
Drain Source ON Voltage
VDS
Static Drain Source ON Resistance
rDS(ON)
Min
– 10
IFN5434
Min
– 200
–3
–9
100
–1
Process NJ903
Max
Unit
V
IG = – 1µA, VDS = ØV
– 200
pA
VGS = – 15V, VDS = ØV
– 200
nA
VGS = – 15V, VDS = ØV
–4
V
VDS = 5V, IG = 3 nA
– 25
– 200
– 200
2
Max
– 25
– 200
Gate Reverse Current
Drain Cutoff Current
Max
IFN5433
– 25 V
100 mA
300 mW
2.4 mW/°C
30
Test Conditions
mA
VDS = 15V, VGS = ØV
pA
VDS = 5V, VGS = – 10V
200
nA
VDS = 5V, VGS = – 10V
100
mV
VGS = ØV, ID = 10 mA
7
10
Ω
VDS = ØV, ID = 10 mA
200
200
200
200
200
50
70
5
TA = 150°C
TA = 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
5
7
10
Ω
VGS = ØV, ID = ØA
f = 1 kHz
Common Source Input Capacitance
Ciss
60
60
60
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Common Source Reverse
Transfer Capacitance
Crss
20
20
20
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Turn ON Delay Time
td(on)
4
4
4
ns
Rise Time
tr
1
1
1
ns
Turn OFF Delay Time
td(off)
6
6
6
ns
Fall Time
tf
30
30
30
ns
VDD = 1.5 V, VGS(ON) = ØV
VGS(OFF) = – 12V, ID(ON) = 10 mA
(IFN5432) RL = 145 Ω
(IFN5433) RL = 143 Ω
(IFN5433) RL = 140 Ω
Switching Characteristics
TOÐ52 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Drain, 3 Gate & Case
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1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375