Databook.fxp 1/13/99 2:09 PM Page B-63 B-63 01/99 P1086, P1087 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: P1086 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS 30 Gate Reverse Current IGSS 2 Gate Source Cutoff Voltage VGS(OFF) 10 Saturation Drain Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Drain Reverse Current IDGO Drain Source ON Voltage VDS(ON) Static Drain Source ON Resistance P1087 Min Max 30 – 10 Process PJ99 Unit Test Conditions V IG = 1 µA, VDS = ØV 2 nA VGS = 15V, VDS = ØV 5 V VDS = – 15V, ID = – 1 µA mA VDS = – 20V, VGS = ØV – 5.0 30 V 50 mA 360 mW 3.27 mW/°C – 10 – 10 nA VDS = – 15V, VGS = 12V (P1086) – 0.5 – 0.5 µA VGS = 7V (P1087) 2 2 nA VDG = – 15V, I S = ØA 0.1 0.1 µA VDG = – 15V, I S = ØA – 0.5 – 0.5 V VGS = ØV, ID = – 6 mA (P1086) – 0.5 – 0.5 V VGS = ØV, ID = – 3 mA (P1087) rDS(ON) 75 150 Ω I D = – 1 mA, VGS = ØV Drain Source ON Resistance rds(on) 75 150 Ω I D = Ø, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 45 45 pF VDS = – 15V, VGS = ØV f = 1 kHz Common Source Reverse Transfer Capacitance 10 10 pF Crss 10 10 pF VDS = ØV, VGS = 12V (P1086) VDS = ØV, VGS = 7V (P1087) f = 1 MHz VDD = – 6V, VGS(ON) = ØV TA = 85°C TA = 85°C Dynamic Electrical Characteristics Switching Characteristics Turn ON Delay Time td(on) 15 15 ns Rise Time tr 20 75 ns Turn OFF Delay Time td(off) 15 25 ns VD(ON) Fall Time tf 50 100 ns RL TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPP1086, SMPP1087 P1086 VGS(OFF) 12 P1087 7 V –6 –3 MA 910 1.8K Ω Pin Configuration 1 Source, 2 Drain, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375