GaAs MMIC VSAT Power Amplifier, 0.5W, 14.0-14.5 GHz AM42-0041 AM42-0041 GaAs MMIC VSAT Power Amplifier, 0.5W 14.0 - 14.5 GHz Features • • • • • CR-15 High Linear Gain: 28 dB Typ. High Saturated Output Power: +28 dBm Typ. High Power Added Efficiency: 22% Typ. 50Ω Input/Output Broadband Matched High Performance Ceramic Bolt Down Package Description M/A-COM’s AM42-0041 is a four-stage MMIC linear power amplifier in a ceramic bolt down style hermetic package. The AM42-0041 employs a fully matched chip with internally decoupled Gate and Drain bias networks. The AM42-0041 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0041 is ideally suited for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components. M/A-COM’s AM42-0041 is fabricated using a mature 0.5 micron MBE based GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = ± 0.005 .XX = ± 0.010 Ordering Information Part Number AM42-0041 Package Ceramic Bolt Down Package Electrical Specifications: TA = +25°C, VDD = +8V, VGG adjusted for Ids = 500 mA, Z0 = 50Ω, F = 14.0 - 14.5 GHz Parameter Linear Gain Input VSWR Output VSWR Saturated Output Power Output Power Flatness vs. Frequency Output Power vs. Temperature (with respect to TA=+25°C) Noise Figure Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance Power Added Efficiency Abbv. GL VSWRIN VSWROUT PSAT Test Conditions PIN ≤ -10 dBm PIN ≤ -10 dBm PIN ≤ -10 dBm PIN = +3 dBm, IDD=500 mA Typ. Units dB — — dBm Min. 27 — — 27.0 Typ. 28 2.5:1 2.5:1 28.0 Max. — 2.7:1 — 29.0 PSAT PIN = +3 dBm, IDD=500 mA Typ. dB — 1.0 1.5 PSAT PIN = +3 dBm, IDD=500 mA Typ. TA= -40°C to +70°C PIN ≤ -10 dBm, IDD=500 mA Typ. PIN = +3 dBm PIN = +3 dBm, Ids=500 mA Typ. PIN = +3 dBm, Ids=500 mA Typ. 25°C Heat Sink PIN = +3 dBm, Ids=500 mA Typ. dB — ±0.4 — dB mA V mA °C/W % — 400 -2.4 — — — 7 500 -1.0 5 9.5 22 — 600 -0.4 15 — — NF IDD VGG ΙGG θJC PAE V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 0.5W, 14.0-14.5 GHz 1,2,3,4 Absolute Maximum Ratings Parameter Input Power VDD VGG VDD - VGG Ids Channel Temperature Storage Temperature AM42-0041 3,4,7 Typical Bias Configuration Absolute Maximum +23 dBm +12 Volts -3 Volts 12 Volts 1000 mA -40°C to +85°C -65°C to +150°C 1. Operation of this device outside any of these limits may cause permanent damage. 2. Case Temperature (TC) = +85°C. 3. Nominal bias is obtained by first connecting -2.4 volts to pin 5 or pin 6 (VGG), followed by connecting +8 volts to pin 1 or pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 500 mA typical. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc bias voltage appears at the RF ports. 6. The dc resistance at the input and output ports is a short circuit. No voltage is allowed on these ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. V DD 3.3 µ F 1 or 10 0.01 µ F 3 8 AM42-0041 RF IN 1.0 µ F 2,4,7,9 RF OUT 5 or 6 GND V GG Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 Pin Name VDD GND RF In GND VGG VGG GND RF Out GND VDD Description Drain Supply DC and RF Ground RF Input DC and RF Ground Gate Supply Gate Supply DC and RF Ground RF Output DC and RF Ground Drain Supply V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 0.5W, 14.0-14.5 GHz AM42-0041 Typical Performance @ +25°C Input and Output Return Loss vs. Frequency Linear Gain vs. Frequency 40 0 Magnitude (dB) -5 20 10 0 -10 -15 -20 S22 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.0 17.5 17.0 16.5 16.0 15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 -30 11.5 -30 11.0 -25 10.5 S11 -10 -20 10.0 25 PAE (%) 15 10 5 16.0 15.6 15.2 14.8 14.4 14.0 13.2 12.8 Frequency (GHz) Output Power vs. Input Power F = 14.25 GHz 25 Power Added Efficiency (PAE) vs. Input Power F = 14.25 GHz 20 PAE (%) POUT (dBm) 12.4 12.0 16.0 15.6 15.2 14.8 14.4 14.0 13.6 13.2 12.8 0 Frequency (GHz) 35 33 31 29 27 25 23 21 19 17 15 Power Added Efficiency (PAE) vs Frequency @ PIN = +3 dBm 20 12.4 35 33 31 29 27 25 23 21 19 17 15 Frequency (GHz) Output Power vs Frequency @ PIN = +3 dBm 12.0 POUT (dBm) Frequency (GHz) 13.6 Linear Gain (dB) 30 15 10 5 0 -10-9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 PIN (dBm) -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 PIN (dBm) V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 0.5W, 14.0-14.5 GHz AM42-0041 V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.