RENESAS M54133FP

M54133FP/GP
Earth Leakage Current Detector
REJ03F0029-0100Z
Rev.1.0
Sep.16.2003
Description
The M54133FP/GP is a semiconductor integrated circuit developed for use in high-speed earth leakage breakers
incorporating functions to protect against voltage surges and inverter noise.
Features
• Lightning surge protection
Two-count method adopted
Improved dead-time performance for lightning impulses
• Inverter support
For active/low-pass filter use
Internal op-amp (low current consumption)
Improved high-frequency, high harmonic superposition performance
• Internal time delay function
A time delay function can be configured
• High input sensitivity
VT=11.5 mVrms
• Low current consumption
Standby: 610 µA (typical)
Leakage detection: 650 µA (typical)
• High-stability design
Adopts a circuit with minimal characteristic fluctuation when changes occur in the power supply voltage or ambient
temperature
Applications
• Earth leakage breaker
Recommended Operating Conditions
• Operating power supply voltage range: 7 to 12 V
• Operating ambient temperature: –20 to 85°C
Rev.1.0, Sep.16.2003, page 1 of 17
M54133FP/GP
Block Diagram
VS
OPI+
C1
OPI–
C2
OPAO
ILKI
VREF
16
15
14
13
12
11
10
9
–
A
+
M54133FP/GP
POWER SUPPLY CIRCUIT
SCR
DRIVER
LEAKAGE DETECTION
1
2
3
4
5
6
7
8
GND
IREF
VCC
OFFC
TRC1
TRC2
DLYC
SCRT
Rev.1.0, Sep.16.2003, page 2 of 17
M54133FP/GP
Pin Configuration
GND 1
16 VS
IREF 2
15 OPI+
OFFC 4
TRC1 5
TRC2 6
DLYC 7
SCRT 8
M54133FP/GP
VCC 3
14 C1
13 OPI–
12 C2
11 OPAO
10 ILKI
9
VREF
Outline 16P2N-A(FP)
Outline 16P2E-A(GP)
Pin Description
Pin no.
Name
Function
16
VS
Power supply
• Common
3
2
1
VCC
IREF
GND
Output pin for internal constant-voltage circuit; connected to decoupling capacitor
Pin for connection to resistor to set constant current for internal circuits; approx. 1.3 V
Ground
• Op-amp
13
15
14
CPI–
CPI+
C1
12
11
C2
OPAO
Op-amp input pins
Pin for connection to capacitors to prevent noise-induced erroneous operation; connected
between pins [13], [14] and pins [15], [14]
Pin for connection to capacitor to prevent oscillation; connected with pin [11].
Op-amp output pin
• Leakage detection, SCR driving circuit
9
10
5
VREF
ILKI
TRC1
Input reference level pin for leak detection circuit; approx. 2.4 V
Another input pin for leak detection circuit
Pin to connect a capacitor used to integrate the level discriminator output signal of the leak input
signal
6
4
TRC2
OFFC
7
8
DRYC
SCRT
Pin to connect a capacitor for noise elimination
When leak input signal is not continued
When a leak is detected and SCR is turned on
After a prescribed amount of time, this IC is returned to the initial state.
A capacitor to set the time for this function is connected.
Pin to connect a capacitor to set the time when using the time delay function
Thyristor driving output pin
Rev.1.0, Sep.16.2003, page 3 of 17
M54133FP/GP
Absolute Maximum Ratings
(Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
IS
Power supply current
Maximum power supply voltage
Differential input voltage
Differential input current
Input current
Power consumption
Operating ambient temperature
Storage temperature
IVSmax.
Vid
IIOP
IIG
Pd
Topr
Tstg
Rev.1.0, Sep.16.2003, page 4 of 17
Test conditions
Across OPI+ and OPI–
Across OPI+ and OPI–
Across VREF and GND
Ratings
Unit
4
15
–0.8 to 0.8
–5 to 5
10
200
–20 to 85
–55 to 125
mA
V
V
mA
mA
mW
°C
°C
M54133FP/GP
Electrical Characteristics
(Unless otherwise noted, Ta = 25°C)
Symbol
Quantity
Is0
Power
supply
circuit
Is1
Is2
Measurement conditions
Ratings
Vs
Min.
Typ.
Max.
Units
9V
520
610
700
µA
Power supply current, during leak
detection
560
650
740
µA
Power supply current, immediately
after SCR driving
480
570
660
µA
%/°C
Power supply current, during standby
—
Is0 ambient temp. storage dependence
9V
Ta = –20 to 85°C
—
–0.2
—
VSmax.
Voltage at max. current
—
IS = 4 mA
—
13.9
15
V
VCC
VCC pin output voltage
9V
IOH = –1 mA
—
5.2
—
V
Voltage amplification
9V
f = 1 kHz
—
40
—
dB
–3 dB
—
6
—
kHz
GV
BW
Opamp
Frequency band
VO
Maximum output voltage
—
3.5
—
Vpp
ISOURCE
OPAO pin "H" output current
—
2.8
—
mA
ISINK
OPAO pin "L" output current
—
0.8
—
mA
VOF
Output offset voltage
—
0
—
mV
IIB
Input bias current
—
125
—
nA
V
VION
IIH
VREF
VCL
EIOH1
VTH1
Iidc = ±4 mA
—
±0.8
—
vs. VREF
—
±14
—
mVdc
ILK1 pin input bias current
VIN = VREF
—
220
—
nA
VREF pin output voltage
IOH = –200 µA
—
2.4
—
V
VREF-GND clamping voltage
IRCL = 5 mA
—
4.7
—
V
VO = 0; IOH = –7.6 µA
–10
—
10
%
V
Differential input clamping voltage
VIB
Leakage
detection
circuit
3 ms
circuit
Leakage detection DC input voltage
TRC1 pin "H" output current precision
9V
9V
—
2.4
—
ETW1
Tw1 pulse width precision
C1 = 0.01 µF; TW1 = 3 ms
–15
—
15
%
—
Tw1 ambient temperature dependence
Ta = –20 to 85°C
—
0
—
%/°C
EIOH2
VTH2
1 ms
circuit
TRC1 pin threshold voltage
TRC2 pin "H" output current precision
9V
VO = 0; IOH = –7.6 µA
TRC2 pin threshold voltage
–10
—
10
%
—
2.4
—
V
ETW2
Tw2 pulse width precision
C2 = 0.0047 µF; TW2 = 1.5 ms
–15
—
15
%
—
Tw2 ambient temperature dependence
Ta = –20 to 85°C
—
0
—
%/°C
9V
VO = 0; IOH = –7.6 µA
–10
—
10
%
—
2.4
Reset timer pulse width precision
9V
C3 = 0.33 µF; TW2 = 75 ms
–30
—
30
%
DLYC pin "H" output current precision
9V
VO = 0; IOH = –7.6 µA
–10
—
10
%
—
2.4
Time delay timer pulse width precision
9V
C4 = 1.0 µF; TW2 = 300 ms
–30
—
30
%
SCRT pin "L" output voltage
9V
IOL = 200 µA
—
0.1
0.2
V
SCRT pin "H" output current
9V
VO = 0.8 V
Ta = –20°C
–100
–160
—
µA
Ta = 25°C
–50
–130
—
µA
EIOH3
VTH3
Reset
circuit
ETW3
EIOH4
VTH4
ETW4
VOL8
IOHc
IOHn
Time
delay
circuit
SCR
driver
circuit
OFFC pin "H" output current precision
OFFC threshold voltage
DLYC threshold voltage
VT
—
Overall trip
IOH hold power supply voltage
—
Overall leak detection AC voltage
9V
VT ambient temperature dependence
Rev.1.0, Sep.16.2003, page 5 of 17
V
–30
–100
—
µA
—
3.0
4.0
V
60 Hz
—
11.5
—
mVrms
Ta = +25 to 80°C
—
–8.0
—
%/°C
Ta = +25 to –20°C
—
+2.0
—
Ta = 85°C
IOHh
Vsoff
V
M54133FP/GP
Timing Charts
WITHOUT DELAY FUNCTION
ILKI INPUT
2.4V
TRC1 PIN
Tw1
2.4V
TRC2 PIN
2.4V
DLYC PIN
Tw2
2.4V
OFFC PIN
0.7V
Tw3
SCRT OUTPUT
USING DELAY FUNCTION
ILKI INPUT
TRC1 PIN
2.4V
TRC2 PIN
DLYC PIN
2.4V
2.4V
Tw4
2.4V
OFFC PIN
Tw3
SCRT OUTPUT
Rev.1.0, Sep.16.2003, page 6 of 17
M54133FP/GP
Input/Output Equivalent Circuit
3
VCC
VS 16
200
BAND GAP
1.3V
2
IREF
EXTERNAL R
(180k)
12 C2
VCC
800
2.4V
100
200k
OPI- 13
470
11 OPAO
VREF
9
OPI+ 15
100
ILKI 10
4.7k
C1 14
8
SCRT
6 STAGES
25µA
48k
VCC
7.5µA
7.5µA
7.5µA
2.4V
100
5
TCR1
6
TCR2
4
OFFC
7
DLYC
Units Resistance : Ω
Capacitance : F
Rev.1.0, Sep.16.2003, page 7 of 17
M54133FP/GP
Precaution for Application
Described below are precautions on usage of the M54133FP and the M54133GP. Note that each precaution presents a still better
example. It is advisable to review it carefully to learn optimal conditions.
1. Voltage applied to VS
(1) Fig.1 shows characteristics of circuit current IS. (IS characterizes clamp circuit shown in INPUT/OUTPUT
equivalent circuits.) To design power supply, adapt it to IC, considering IS characteristics.
(2) Rectification for use of commercial AC line as power source.
RS
VS
COMMERCIAL
AC LINE
IC
VZ
3
IS
(mA)
+25°C
2
+85°C
-20°C
1
0
∫∫
12
13
14
15
VS(V)
Fig. 1 CHARACTERISTICS OF VS TO IS
a) For VZ, select zener diode of 12V or less. (Prevent supply voltage VS from exceeding absolute maximum rating
of 15V.)
b) Escalated temperature may decrease supply voltage to produce large current IS. In this case, RS limits IS.
(3)For use of common DC power supply, set supply voltage VS within range of 7 to 12V.
2. Resistor (R = 180kΩ) at IREF pin
This resistor provides constant-reference-current source for IC. (Constant current source protects IC against
fluctuations in supply voltage and ambient temperature.)
Since every circuit is characterized by resistance of this resistor, the use of high-precision resistor (accuracy of ±2%) is
recommended.
3. Laying out printed-circuit board
Foreign noise (from noise simulator, for example) may cause malfunctions.
To improve noise resistance, lay out printed-circuit patterns so that wirings of IC to additional capacitors and resistors
can be made as short as possible.
Carefully design patterns especially for wiring capacitors to VS of [16] pin , VCC of [3] pin , and SCRT of [8] pin.
4. Avoid SCRT output pin voltage from falling negative below GND level.
Rev.1.0, Sep.16.2003, page 8 of 17
M54133FP/GP
5. Reset time applicable to reset timer circuit
The M54133 has reset timer circuit of VL=0.7V, VH=2.4V, and IO=7.5µA. When SCR is on, power supply path is
disconnected from leak detector circuit. As shown in illustration below, disconnection may inhibit VL from falling to
0.7V. Accordingly, reset time may get shortened. To avoid shortage, predetermine a reset time that includes extra time.
T=
CX(VH-VL) = 0.33µFX(2.4-0.7)
=75ms
IO
7.5µA
3.8V
WAVEFORMS
AT
OFFC PIN
2.4V
0.7V
75ms
WAVEFORMS
AT
SCRT PIN
0V
t=10ms
Note. Predetermined reset time may get shortened by t.
Rev.1.0, Sep.16.2003, page 9 of 17
M54133FP/GP
Typical Characteristics
THERMAL DERATING
(MAXIMUM RATING)
POWER DISSIPATION Pd (mW)
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (°C)
3
SUPPLY CURRENT VS. SUPPLY VOLTAGE
CHARACTERISTICS
800
Ta=+25°C
SUPPLY CURRENT (µA)
SUPPLY CURRENT (mA)
SUPPLY CURRENT VS. SUPPLY VOLTAGE
CHARACTERISTICS
4
STANDBY
+85°C
+25°C
-20°C
2
1
0
700
LEAK DETECTION
STANDBY
600
WHEN SCR IS ON
500
400
0
5
10
6
15
8
10
12
SUPPLY VOLTAGE (V)
SUPPLY CURRENT VS. AMBIENT TEMPERATURE
CHARACTERISTICS
800
VS=9V
VOLTAGE GAIN VS. FREQUENCY
CHARACTERISTICS
700
LEAK DETECTION
STANDBY
600
WHEN SCR IS ON
500
400
-50
50
VS=9V
VOLTAGE GAIN (dB)
SUPPLY CURRENT (µA)
SUPPLY VOLTAGE (V)
40
30
20
10
0
50
AMBIENT TEMPERATURE (°C)
Rev.1.0, Sep.16.2003, page 10 of 17
100
1
10
100
1k
10k
FREQUENCY (Hz)
100k
1M
INPUT BIAS CURRENT (nA)
OPERATIONAL AMPLIFIER
INPUT CURRENT BIAS VS.
AMBIENT TEMPERATURE CHARACTERISTICS
400
VS=9V
300
200
100
0
-50
0
50
MAXIMUM OUTPUT CURRENT (mA)
M54133FP/GP
MAXIMUM OPERATIONAL AMPLIFIER
OUTPUT CURRENT VS.
AMBIENT TEMPERATURE CHARACTERISTICS
4
VS=9V
3
2
1
0
-50
100
AMBIENT TEMPERATURE (°C)
1.3
1.2
1.1
10
1.4
1.3
1.2
1.1
-50
12
SUPPLY VOLTAGE (V)
2.5
2.4
8
10
SUPPLY VOLTAGE (V)
Rev.1.0, Sep.16.2003, page 11 of 17
50
100
VREF OUTPUT VOLTAGE VS.
AMBIENT TEMPERATURE CHARACTERISTICS
2.7
VS=9V
VREF OUTPUT VOLTAGE (V)
VREF OUTPUT VOLTAGE (V)
2.6
6
0
AMBIENT TEMPERATURE (°C)
VREF OUTPUT VOLTAGE VS.
SUPPLY VOLTAGE CHARACTERISTICS
2.7
Ta=+25°C
2.3
100
IREF OUTPUT VOLTAGE VS.
AMBIENT TEMPERATURE CHARACTERISTICS
1.5
VS=9V
IREF OUTPUT VOLTAGE (V)
IREF OUTPUT VOLTAGE (V)
1.4
8
50
AMBIENT TEMPERATURE (°C)
IREF OUTPUT VOLTAGE VS.
SUPPLY VOLTAGE CHARACTERISTICS
1.5
Ta=+25°C
6
0
12
2.6
2.5
2.4
2.3
-50
0
50
AMBIENT TEMPERATURE (°C)
100
M54133FP/GP
5.5
5.0
4.5
4.0
VCC OUTPUT VOLTAGE VS.
AMBIENT TEMPERATURE CHARACTERISTICS
6.0
VS=9V
VCC OUTPUT VOLTAGE (V)
VCC OUTPUT VOLTAGE (V)
VCC OUTPUT VOLTAGE VS.
SUPPLY VOLTAGE CHARACTERISTICS
6.0
Ta=+25°C
6
8
10
5.5
5.0
4.5
4.0
-50
12
SUPPLY VOLTAGE (V)
2.5
2.0
8
10
2.0
-50
12
8
7
10
SUPPLY VOLTAGE (V)
Rev.1.0, Sep.16.2003, page 12 of 17
50
100
TRC1/TRC2/OFFC/DLYC
"H" OUTPUT CURRENT VS.
AMBIENT TEMPERATURE CHARACTERISTICS
10
VS=9V
"H" OUTPUT CURRENT (µA)
"H" OUTPUT CURRENT (µA)
9
8
0
AMBIENT TEMPERATURE (°C)
TRC1/TRC2/OFFC/DLYC
"H" OUTPUT CURRENT VS.
SUPPLY VOLTAGE CHARACTERISTICS
10
Ta=+25°C
6
100
2.5
SUPPLY VOLTAGE (V)
6
50
TRC1/TRC2/OFFC/DLYC
THRESHOLD VOLTAGE VS.
AMBIENT TEMPERATURE CHARACTERISTICS
3.0
VS=9V
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
TRC1/TRC2/OFFC/DLYC
THRESHOLD VOLTAGE VS.
SUPPLY VOLTAGE CHARACTERISTICS
3.0
Ta=+25°C
6
0
AMBIENT TEMPERATURE (°C)
12
9
8
7
6
-50
0
50
AMBIENT TEMPERATURE (°C)
100
M54133FP/GP
3
2
TRC1 PULSE WIDTH VS.
AMBIENT TEMPERATURE CHARACTERISTICS
4
VS=9V
TRC1=0.01µF
TRC1 PULSE WIDTH (ms)
TRC1 PULSE WIDTH (ms)
TRC1 PULSE WIDTH VS.
SUPPLY VOLTAGE CHARACTERISTICS
4
Ta=+25°C
TRC1=0.01µF
6
8
10
3
2
-50
12
OFFC "L" OUTPUT VOLTAGE VS.
SUPPLY VOLTAGE CHARACTERISTICS
1.2
Ta=+25°C
1.0
0.8
0.6
0.4
6
8
10
0.8
0.6
70
SUPPLY VOLTAGE (V)
Rev.1.0, Sep.16.2003, page 13 of 17
12
OFFC PULSE WIDTH (ms)
OFFC PULSE WIDTH (ms)
80
10
0
50
100
AMBIENT TEMPERATURE (°C)
90
8
100
1.0
0.4
-50
12
OFFC PULSE WIDTH VS.
SUPPLY VOLTAGE CHARACTERISTICS
100
Ta=+25°C
OFFC=0.33µF
6
50
OFFC "L" OUTPUT VOLTAGE VS.
AMBIENT TEMPERATURE CHARACTERISTICS
1.2
VS=9V
SUPPLY VOLTAGE (V)
60
0
AMBIENT TEMPERATURE (°C)
OFFC "L" OUTPUT VOLTAGE (V)
OFFC "L" OUTPUT VOLTAGE (V)
SUPPLY VOLTAGE (V)
OFFC PULSE WIDTH VS.
AMBIENT TEMPERATURE CHARACTERISTICS
100
VS=9V
OFFC=0.33µF
90
80
70
60
-50
0
50
AMBIENT TEMPERATURE (°C)
100
M54133FP/GP
TOTAL LEAK DETECTION AC
VOLTAGE (mVms)
DLYC PULSE WIDTH (ms)
350
300
250
200
DLYC PULSE WIDTH VS.
AMBIENT TEMPERATURE CHARACTERISTICS
400
VS=9V
DLYC=1.0µF
6
8
10
350
300
250
200
-50
12
0
50
100
SUPPLY VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
TOTAL LEAK DETECTION AC VOLTAGE VS.
SUPPLY VOLTAGE CHARACTERISTICS
13
Ta=+25°C
TRC1=0.01µF
fin=60Hz
12
TOTAL LEAK DETECTION AC VOLTAGE VS.
AMBIENT TEMPERATURE CHARACTERISTICS
13
VS=9V
TRC1=0.01µF
fin=60Hz
12
11
10
TOTAL LEAK DETECTION AC
VOLTAGE (mVms)
DLYC PULSE WIDTH (ms)
DLYC PULSE WIDTH VS.
SUPPLY VOLTAGE CHARACTERISTICS
400
Ta=+25°C
DLYC=1.0µF
9
6
8
10
11
10
9
-50
12
SUPPLY VOLTAGE (V)
50
SCRT "L" OUTPUT VOLTAGE (V)
SCRT "L" OUTPUT VOLTAGE VS.
AMBIENT TEMPERATURE CHARACTERISTICS
0.4
VS=9V
IOL=200µA
0.3
0.2
0.1
0
-50
0
50
AMBIENT TEMPERATURE (°C)
"L" OUTPUT CURRENT (µA)
Rev.1.0, Sep.16.2003, page 14 of 17
100
AMBIENT TEMPERATURE (°C)
SCRT "L" OUTPUT VOLTAGE VS.
"L" OUTPUT CURRENT CHARACTERISTICS
SCRT "L" OUTPUT VOLTAGE (V)
0
100
SCRT "H" OUTPUT CURRENT VS.
SUPPLY VOLTAGE CHARACTERISTICS
400
Ta=+25°C
300
200
100
0
0
2
4
6
8
SUPPLY VOLTAGE (V)
Rev.1.0, Sep.16.2003, page 15 of 17
10
12
SCRT "H" OUTPUT CURRENT (µA)
SCRT "H" OUTPUT CURRENT (µA)
M54133FP/GP
SCRT "H" OUTPUT CURRENT VS.
AMBIENT TEMPERATURE CHARACTERISTICS
400
VS=9V
300
200
100
0
-50
0
50
AMBIENT TEMPERATURE (°C)
100
HE
Rev.1.0, Sep.16.2003, page 16 of 17
G
Z1
E
1
16
EIAJ Package Code
SOP16-P-300-1.27
z
Detail G
e
D
JEDEC Code
—
y
b
8
9
x
Weight(g)
0.2
M
F
A
Detail F
A2
Lead Material
Cu Alloy
L1
MMP
c
A1
A
A1
A2
b
c
D
E
e
HE
L
L1
z
Z1
x
y
Symbol
e1
b2
e1
I2
b2
Dimension in Millimeters
Min
Nom
Max
2.1
0
0.1
0.2
—
1.8
—
0.35
0.4
0.5
0.18
0.2
0.25
10.0
10.1
10.2
5.2
5.3
5.4
—
1.27
—
7.5
7.8
8.1
0.4
0.6
0.8
—
1.25
—
—
0.605
—
—
0.755
—
—
0.25
—
—
0.1
—
0°
8°
—
—
0.76
—
7.62
—
—
1.27
—
Recommended Mount Pad
e
Plastic 16pin 300mil SOP
I2
16P2N-A
M54133FP/GP
Package Dimensions
L
Rev.1.0, Sep.16.2003, page 17 of 17
G
e
Z1
E
HE
1
16
z
D
b
8
9
Detail G
y
JEDEC Code

x
M
Weight(g)
0.06
Detail F
A2
A
Lead Material
Alloy 42
L1
EIAJ Package Code
SSOP16-P-225-0.65
c
A1
F
L
A
A1
A2
b
c
D
E
e
HE
L
L1
z
Z1
x
y
Symbol
e1
b2
e1
I2
b2
Dimension in Millimeters
Min
Nom
Max
1.45


0.2
0.1
0

1.15

0.32
0.22
0.17
0.2
0.15
0.13
5.1
5.0
4.9
4.5
4.4
4.3

0.65

6.6
6.4
6.2
0.7
0.5
0.3

1.0


0.225


0.375


0.13
0.1


0°

10°

0.35

5.8


1.0

Recommended Mount Pad
e
Plastic 16pin 225mil SSOP
I2
16P2E-A
M54133FP/GP
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2003. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 1.0