RENESAS 2SK3156

2SK3156
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1081-0301
(Previous: ADE-208-683A)
Rev.3.01
Apr 27, 2006
Features
• Low on-resistance
RDS =50 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
Rev.3.01 Apr 27, 2006 page 1 of 7
2
3
S
2SK3156
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
Ratings
150
±20
20
80
20
20
30
75
150
–55 to +150
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Rev.3.01 Apr 27, 2006 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
150
±20
—
—
1.0
—
—
13
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
50
60
22
1750
600
300
18
125
400
190
0.9
170
Max
—
—
±10
10
2.5
70
80
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 VNote4
ID = 10 A, VGS = 4 V Note4
ID = 10 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3 Ω
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0
diF/ dt = 50 A/µs
2SK3156
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
60
20
0
50
20
10
D
10
=
C
200
10
0
µs
µs
O ms(1
(T per sho
c ati t)
= on
2
25
°C
1 Operation in
)
0.5 this area is
limited by RDS(on)
5
0.2
0.1
Ta = 25°C
0.05
0.1 0.3
1
3
10
100 300 1000
30
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
Pulse Test
5V
VDS = 10 V
Pulse Test
4V
3V
Drain Current ID (A)
Drain Current ID (A)
150
PW
Case Temperature TC (°C)
10 V
20
16
100
10
50
s
40
200
100
m
Drain Current ID (A)
500
1
Channel Dissipation Pch (W)
80
12
8
VGS = 2.5 V
4
16
75°C
12
25°C
8
Tc = –25°C
4
2V
2
4
6
8
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.0
Pulse Test
1.6
1.2
ID = 20 A
0.8
10 A
0.4
0
0
10
5A
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.3.01 Apr 27, 2006 page 3 of 7
Static Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (V)
0
1000
Pulse Test
500
200
100
VGS = 4 V
50
10 V
20
10
1
2
5
10
20
Drain Current ID (A)
50
100
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
2SK3156
250
Pulse Test
200
150
5, 10 A
ID = 20 A
100
VGS = 4 V
5, 10 A
20 A
50
10 V
0
–40
0
40
80
120
160
0.3
VDS = 10 V
Pulse Test
0.1
0.1 0.2
10 20
5
2
0.5 1
50 100
Capacitance C (pF)
3000
Ciss
1000
300
Coss
100
Crss
30
20
VGS = 0
f = 1 MHz
10
0.3
1
3
10
30
0
100
10
20
30
40
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VGS
VDD = 100 V
50 V
25 V
16
12
120
VDS
8
VDD = 100 V
50 V
25 V
40
40
80
120
4
160
Gate Charge Qg (nc)
Rev.3.01 Apr 27, 2006 page 4 of 7
0
200
50
5000
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
2000
Switching Time t (ns)
20
ID = 20 A
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
Drain to Source Voltage VDS (V)
1
10000
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
50
0
3
Typical Capacitance
vs. Drain to Source Voltage
100
80
75°C
25°C
Body to Drain Diode Reverse
Recovery Time
200
160
10
Drain Current ID (A)
500
200
Tc = –25°C
30
Case Temperature TC (°C)
1000
10
0.1
100
1000
td(off)
500
tf
200
100
tr
50
td(on)
20
10
0.1 0.2
0.5
1
2
5 10 20
Drain Current ID (A)
50
2SK3156
16
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
20
Reverse Drain Current IDR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
VGS = 10 V
12
8
5V
0, –5 V
4
0
0.2
0.4
0.6
0.8
Source to Drain Voltage
1.0
50
IAP = 20 A
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
40
30
20
10
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.67°C/W, Tc = 25°C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Avalanche Test Circuit
VDS
Monitor
PW
T
Avalanche Waveform
L
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.3.01 Apr 27, 2006 page 5 of 7
VDD
2SK3156
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50 Ω
VDD
= 30 V
Vout
10%
10%
90%
td(on)
Rev.3.01 Apr 27, 2006 page 6 of 7
tr
10%
90%
td(off)
tf
2SK3156
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-46
PRSS0004AC-A
TO-220AB / TO-220ABV
1.8g
Unit: mm
2.79 ± 0.2
11.5 Max
10.16 ± 0.2
9.5
φ 3.6
1.26 ± 0.15
15.0 ± 0.3
18.5 ± 0.5
1.27
6.4
+0.2
–0.1
8.0
4.44 ± 0.2
+0.1
–0.08
7.8 ± 0.5
0.76 ± 0.1
14.0 ± 0.5
2.7 Max
1.5 Max
0.5 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
Ordering Information
Part Name
2SK3156-E
Quantity
500 pcs
Shipping Container
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.01 Apr 27, 2006 page 7 of 7
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Colophon .6.0