2SK2928 Silicon N Channel MOS FET High Speed Power Switching REJ03G1042-0400 (Previous: ADE-208-551B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.040 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.4.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK2928 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID Ratings 60 ±20 15 60 15 15 19 40 150 –55 to +150 ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.5 — — 7 — — — — — — — — — Typ — — — — — 0.040 0.060 11 500 260 110 10 80 100 110 0.9 50 Max — — 10 ±10 2.5 0.052 0.105 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V Note4 ID = 8 A, VGS = 4 V Note4 ID = 8 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 8 A, RL = 3.75 Ω IF = 15 A, VGS = 0 IF = 15 A, VGS = 0 diF/ dt =50 A/µs 2SK2928 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 300 Drain Current ID (A) Channel Dissipation Pch (W) 80 0 60 40 20 10 100 30 PW DC 10 er 3 50 100 150 0.1 Ta = 25°C 0.1 0.3 1 200 1 10 m on 1s ho t ) (T c= 3 µs 0 m µs s s( ati Operation in this area is limited by RDS(on) 1 0.3 0 Op = 10 10 25 °C ) 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 6 V 5 V 20 VDS = 10 V Pulse Test Pulse Test 16 Drain Current ID (A) Drain Current ID (A) 20 4V 4 .5 V 12 3.5 V 8 3V 4 16 12 8 25°C Tc = 75°C 4 –25°C VGS = 2.5 V 2 4 6 8 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 2.0 Pulse Test 1.6 1.2 ID = 20 A 0.8 10 A 0.4 5A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 0 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2928 0.20 Pulse Test 0.16 0.08 5A ID = 10 A 0.12 VGS = 4 V 20 A 10 A 5 A 0.04 10 V 0 –40 0 40 80 120 160 Tc = –25°C 5 25°C 2 75°C 1 0.5 0.1 0.2 2 10 20 5 2000 Capacitance C (pF) 1000 100 50 20 10 Ciss 500 200 Coss 100 50 Crss 20 VGS = 0 f = 1 MHz 10 5 0.1 0.2 0.5 1 2 5 0 10 20 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 VGS VDS 12 VDD = 10 V 25 V 50 V 40 20 4 VDD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) Rev.4.00 Sep 07, 2005 page 4 of 7 8 0 400 1000 Switching Time t (ns) 20 ID = 15 A 80 0 1 Typical Capacitance vs. Drain to Source Voltage 200 60 0.5 Body to Drain Diode Reverse Recovery Time di / dt = 50 A / µs VGS = 0, Ta = 25°C 100 VDS = 10 V Pulse Test Drain Current ID (A) Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 10 Case Temperature TC (°C) 500 Drain to Source Voltage VDS (V) 20 300 td(off) 100 tf 30 tr td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK2928 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 20 16 12 10 V 5V VGS = 0, –5 V 8 4 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 25 IAP = 15 A VDD = 25 V duty < 0.1 % Rg > 50 Ω 20 15 10 5 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.12°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ D= PW T 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit VDS Monitor PW T Avalanche Waveform L EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.4.00 Sep 07, 2005 page 5 of 7 VDD 2SK2928 Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 Ω VDD = 30 V Vout 10% 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 6 of 7 tr 90% td(off) tf 2SK2928 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK2928-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. 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