2SK3070(L), 2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1063-0900 (Previous: ADE-208-684G) Rev.9.00 Sep 07, 2005 Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 2 3 3 S Rev.9.00 Sep 07, 2005 page 1 of 8 2SK3070(L), 2SK3070(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID Ratings 40 ±20 75 300 75 50 333 100 150 –55 to +150 ID(pulse) Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol V(BR)DSS IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Body–drain diode reverse recovery time Note: 4. Pulse test Rev.9.00 Sep 07, 2005 page 2 of 8 trr Min 40 — — 1.0 — — 50 — — — — — — — — — — — — Typ — — — — 4.5 6.5 80 6800 1300 380 130 25 30 60 300 550 400 1.05 90 Max — ±0.1 10 2.5 5.8 10 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 40 V, VGS = 0 ID = 1 mA, VDS = 10 V Note4 ID = 40 A, VGS = 10 V Note4 ID = 40 A, VGS = 4 V Note4 ID = 40 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 75 A VGS = 10 V, ID = 40 A, RL = 0.75 Ω IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/ dt = 50 A/ µs 2SK3070(L), 2SK3070(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 150 100 50 10 PW 100 = 10 DC ms Op (1 s e (T rati hot) c = on 25 Operation in °C ) this area is 30 10 3 limited by RDS(on) 1 0.3 0 100 50 100 150 0.1 Ta = 25°C 0.1 0.3 1 200 100 Typical Transfer Characteristics 100 4V 5V Pulse Test VGS = 10 V 3V 40 20 VDS = 10 V Pulse Test 80 60 40 75°C 25°C 20 Tc = –25°C 2.5 V 0 2 4 6 8 0 10 1 2 3 4 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.4 0.3 ID = 50 A 0.2 20 A 0.1 10 A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.9.00 Sep 07, 2005 page 3 of 8 Static Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Voltage VDS (V) 0.5 0 30 Typical Output Characteristics Drain Current ID (A) Drain Current ID (A) 10 Drain to Source Voltage VDS (V) 80 60 3 Case Temperature TC (°C) 3.5 V Drain to Source Saturation Voltage VDS (on) (V) 10 µ 0µ s s 1 m s 300 Drain Current ID (A) Channel Dissipation Pch (W) 200 5 100 Pulse Test 50 20 10 VGS = 4 V 5 10 V 2 1 1 3 10 30 100 300 1000 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (mΩ) 2SK3070(L), 2SK3070(S) 20 Pulse Test 16 12 ID = 50 A VGS = 10 V 8 4 10, 20 A 10, 20, 50 A 4V 0 –50 0 50 100 150 200 VDS = 10 V Pulse Test 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 0.5 0.1 0.3 1 3 10 30 100 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 30000 VGS = 0 f = 1 MHz Capacitance C (pF) 500 200 100 50 20 100 0.3 1 3 10 30 Coss 1000 Crss 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 75 A VGS 80 16 VDD = 40 V 25 V 10 V 60 VDS 40 12 8 VDD = 40 V 25 V 10 V 20 0 Ciss 3000 100 0 100 80 160 240 4 320 Gate Charge Qg (nc) Rev.9.00 Sep 07, 2005 page 4 of 8 0 400 1000 Switching Time t (ns) 10 0.1 10000 300 di / dt = 50 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 200 Case Temperature TC (°C) 1000 Drain to Source Voltage VDS (V) 500 td(off) 500 tf 200 tr 100 td(on) 50 20 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 10 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 2SK3070(L), 2SK3070(S) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 100 10 V 80 5V 60 VGS = 0, –5 V 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 500 IAP = 50 A VDD = 25 V duty < 0.1 % Rg > 50 Ω 400 300 200 100 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 1.25°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ D= PW T 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit VDS Monitor PW T Avalanche Waveform L EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.9.00 Sep 07, 2005 page 5 of 8 VDD 2SK3070(L), 2SK3070(S) Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 10 V 50 Ω VDD = 30 V 10% 10% 90% td(on) Rev.9.00 Sep 07, 2005 page 6 of 8 10% tr 90% td(off) tf 2SK3070(L), 2SK3070(S) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.9.00 Sep 07, 2005 page 7 of 8 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.7 SC-83 2.49 ± 0.2 11.0 ± 0.5 11.3 ± 0.5 0.3 10.0 +– 0.5 (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.86 +– 0.1 JEITA Package Code Unit: mm 2.2 2SK3070(L), 2SK3070(S) Ordering Information Part Name 2SK3070L-E 2SK3070STL-E Quantity 500 pcs 500 pcs Shipping Container Box (Tube) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.9.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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