DSEI 30-06A Fast Recovery Epitaxial Diode (FRED) TO-247 AD DSEI 30 IFAVM = 37 A VRRM = 600 V = 35 ns trr VRSM V VRRM Type C V A 640 600 A = Anode, C = Cathode A Features ● ● ● ● ● ● ● International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 70 37 375 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 320 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 260 280 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 420 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 340 320 A2s A2s -40...+150 150 -40...+150 °C °C °C 125 W 0.8...1.2 Nm Applications ● ● ● ● ● ● ● Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders C Symbol I2t ● TVJ TVJM Tstg Ptot TC = 25°C Md Mounting torque Maximum Ratings Weight Symbol 6 Test Conditions typ. Advantages ● ● ● ● ● High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling 2014-8-7 C DSEI 30-06A g Characteristic Values max. IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 100 50 7 mA mA mA VF IF = 37 A; TVJ = 150°C TVJ = 25°C 1.4 1.6 V V VT0 rT For power-loss calculations only TVJ = TVJM 1.01 7.1 V mW 1 35 K/W K/W K/W RthJC RthCK RthJA 0.25 trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms L £ 0.05 mH; TVJ = 100°C 10 11 A 1 www.kersemi.com DSEI 30-06A Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 2.2 2.54 0.087 0.102 Fig. 7 Transient thermal impedance junction to case. 2014-8-7 2 www.kersemi.com