MMBT3904 NPN Silicon General Purpose Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot TJ Tstg VALUE 60 40 6 200 350 150 - 55 to + 150 UNIT V V V mA mW ℃ ℃ Characteristics at Ta = 25℃ PARAMETER SYMBOL DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA Collector Base Cutoff Current at VCB = 30 V Base Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Current Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Collector Output Capacitance at VCB = 5 V, IE = 0, f = 1 MHz Delay Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA Rise Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA Storage Time at VCC = 3 V, IC = 10 mA, IB1 = - IB2 = 1 mA Fall Time at VCC = 3 V, IC = 10 mA, IB1 = - IB2 = 1 mA Website: www.kingtronics.com MIN. MAX. UNIT hFE 40 70 100 60 30 300 - - ICBO - 50 nA IEBO - 50 nA V(BR)CBO 60 - V V(BR)CEO 40 - V V(BR)EBO 6 - V VCE(sat) - 0.2 0.3 V VBE(sat) 0.65 - 0.85 0.95 V fT 300 - MHz Cob - 4 pF td - 35 ns tr - 35 ns ts - 200 ns tf - 50 ns Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1 MMBT3904 NPN Silicon General Purpose Transistors RATINGS AND CHARACTERISTIC CURVES MMBT3904 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2