MMBTSC945 NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications The transistor is subdivided into four groups O, Y, P and L, according to its DC current gain. As complementary type the PHP transistor MMBTSA733 is recommended. 1.Base 2.Emitter SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER 3.Collector SYMBOL VALUE UNIT Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Ts - 55 to + 150 ℃ Characteristics at Ta = 25℃ PARAMETER DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group O Y P L Collector Base Cutoff Current at VCB = 40 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz Website: www.kingtronics.com SYMBOL MIN. TYP. 70 120 200 350 hFE - MAX. UNIT 140 240 400 700 - ICBO - - 0.1 µA IEBO - - 0.1 µA V(BR)CBO 60 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.3 V fT - 300 - MHz COB - 2.5 - pF Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1 MMBTSC945 NPN Silicon Epitaxial Planar Transistors RATINGS AND CHARACTERISTIC CURVES MMBTSC945 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2