MMBT9013 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors MMBT9012 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg VALUE 40 30 5 500 200 150 - 55 to + 150 UNIT V V V mA mW ℃ ℃ Characteristics at Ta = 25℃ PARAMETER DC Current Gain at VCE = 1 V, IC = 50 mA SYMBOL Current Gain Group at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at VCE = 1 V, IC = 100 mA Gain Bandwidth Product at VCE = 6 V, IC = 20 mA Website: www.kingtronics.com G H MIN. MAX. UNIT 100 160 40 250 400 - ICBO - 100 nA IEBO - 100 nA V(BR)CBO 40 - V V(BR)CEO 30 - V V(BR)EBO 5 - V VCE(sat) - 0.6 V VBE(sat) - 1.2 V VBE - 1 V fT 100 - MHz hFE Email: [email protected] Tel: (852) 8106 7033 - Fax: (852) 8106 7099 1 MMBT9013 NPN Silicon Epitaxial Planar Transistors RATINGS AND CHARACTERISTIC CURVES MMBT9013 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2