SMD General Purpose Transistor (NPN) MMBT9013 SMD General Purpose Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT9013 Unit Conditions VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current 0.5 A 225 mW TA=25 ˚C PD Total Device Power Dissipation (Note 1) 1.8 mW/°C Derate above 25 ˚C Thermal Resistance, Junction to Ambient 556 °C /W Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C Thermal Resistance, Junction to Ambient 417 °C /W Junction Temperature -55 to +150 °C Storage Temperature Range -55 to +150 °C RθJA PD RθJA TJ TSTG Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/PG Page 1 of 4 SMD General Purpose Transistor (NPN) MMBT9013 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage 20 - V IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage 40 - V IC=0.1mA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - V IE=0.1mA, IC=0 ICBO Base Cut-off Current - 0.15 µA VCB=35V, IE=0 IEBO Emitter Cut-off Current - 0.15 µA VEB=4V, IC=0 Min. Max. Unit Conditions 100 600 - VCE=1V, IC=50mA - 0.6 V IC=500mA, IB=50mA On Characteristics Symbol hFE VCE(sat) Description D.C. Current Gain Collector-Emitter Saturation Voltage Classification Of hFE Rank P Q R S Range 100-200 150-300 200-400 300-600 Marking 13P 13Q 13R 13S Rev. B/PG www.taitroncomponents.com Page 2 of 4 SMD General Purpose Transistor (NPN) MMBT9013 Typical Characteristics Curves Fig.2- DC Current Gain DC Current Gain hFE Collector Current IC (mA) Fig.1- Static Characteristic Fig.3- Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Current IC (mA) Collector Current IC (mA) Fig.4- Current Gain Bandwidth Product Current Gain-Bandwidth Product fT(MHz) Saturation Voltage VCE(sat), VBE(sat) (V) Collector-Emitter Voltage VCE (V) Collector Current IC (mA) Rev. B/PG www.taitroncomponents.com Page 3 of 4 SMD General Purpose Transistor (NPN) MMBT9013 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKAWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI 5F-2, NO. 77, SEC. 1, HSIN TAI WU ROAD, HSI-CHIH, TAIPEI HSIEN, TAIWAN R.O.C. Tel: 886-2-2698-8878 Fax: 886-2-2698-8879 TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/PG www.taitroncomponents.com Page 4 of 4