SMD General Purpose Transistor (PNP) MMBT9012 SMD General Purpose Transistor (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT9012 Unit Conditions VCEO Collector-Emitter Voltage -20 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -0.5 A 225 mW TA=25 ˚C PD Total Device Power Dissipation (Note 1) 1.8 mW/°C Derate above 25 ˚C Thermal Resistance, Junction to Ambient 556 °C /W Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C Thermal Resistance, Junction to Ambient 417 °C /W Junction Temperature -55 to +150 °C Storage Temperature Range -55 to +150 °C RθJA PD RθJA TJ TSTG Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/NX Page 1 of 3 SMD General Purpose Transistor (PNP) MMBT9012 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage -20 - V IC=-0.1mAdc, IB=0 V(BR)CBO Collector-Base Breakdown Voltage -40 - V IC=-0.1mAdc, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage -5.0 - V IE=-0.1mAdc, IC=0 ICBO Collector Cut-off Current - -0.15 µA VCB=-35V, IE=0 IEBO Emitter Cut-off Current - -0.15 µA VEB=-4.0V, IC=0 Min. Max. Unit Conditions 100 600 - VCE=-1.0Vdc, IC=-50mAdc - -0.6 Vdc IC=-500mAdc, IB=-50mAdc On Characteristics -Symbol hFE VCE(sat) Description D.C. Current Gain Collector-Emitter Saturation Voltage Classification Of hFE Rank P Q R S Range 100-200 150-300 200-400 300-600 Marking 12P 12Q 12R 12S Rev. A/NX www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (PNP) MMBT9012 Dimensions in mm How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/NX www.taitroncomponents.com Page 3 of 3