Transistors SMD Type NPN Transistors 2SD1615 1.70 ■ Features 0.1 ● Low VCE(sat) ● Complementary to 2SB1115 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 6 IC 1 ICP 2 Collector Current - Continuous Collector Current - Pulse (Note.1) Collector Power Dissipation PC 2 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V A W ℃ Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 V Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50 mA 0.15 0.3 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50 mA 0.9 1.2 600 Base - emitter voltage VBE DC current gain hFE Collector output capacitance Cob Transition frequency fT VCE= 2V, IC= 50 mA 0.6 VCE= 2V, IC= 100 mA 135 290 VCE= 2V, IC= 1 A 81 270 VCB= 10V, IE= 0,f=1MHz VCE= 2V, IE= -100mA 80 Unit uA V 0.7 19 pF 160 MHz ■ Classification of hfe(1) Type 2SD1615-M 2SD1615-L 2SD1615-K Range 135-270 200-400 300-600 Marking GM GL GK www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1615 ■ Typical Characterisitics at e st r ub of m c 16 w it h 2 out h eat s ink mm 80 0.05 200 µA 60 150 µ A 40 100 µA IB = 50 µA 6 8 10 50 20 10 5 1 www.kexin.com.cn A 3.5 mA 3.0 mA 2.5 mA 2.0 mA 0.4 1.0 mA IB = 0.5 mA 0.2 0 2 5 10 VCE(sat) – Collector Saturation Voltage – V VBE(sat) – Base Saturation Voltage – V hEF – DC Current Gain 100 0.5 m 0.2 0.4 0.6 0.8 1.0 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 200 IC – Collector Current – A 0 4. VCE(sat) – Collector Saturation Voltage – V VCE = 2.0 V 0.05 0.1 0.2 5.0 mA 4.5 mA 1.5 mA DC CURRENT GAIN vs. COLLECTOR CURRENT 500 0.01 0.02 100 COLLECTOR CURRENT vs. COLLECTOR TO EM ITTER VOLTAGE 0.6 VCE – Collector to Emitter Voltage – V 1000 1 2 5 10 20 50 VCE – Collector to Emitter Voltage – V 0.8 IC – Collector Current – A IC – Collector Current – mA 0.1 1.0 200 µ A 4 DC 0.2 0.01 300 µA 2 s 0.02 200 COLLECTOR CURRENT vs. BASE TO EM ITTER VOLTAGE 0 m .7 ×0 40 80 120 160 TA – Ambient Temperature – ˚C 20 0 2SD1615 IC – Collector Current – A s ic 0.5 20 0.5 s m era 1.0 100 2 m =1 PW s m 10 1 nc do nt e ou 1.5 0 1 pulse 2 nm he 2.0 5 W PT – Total Pow er Dissipation – W 2.5 SAFE OPERATING AREA (TRANSIENT THERM AL RESISTANCE M ETHOD) TOTAL POWER DISSIPATION vs. AM BIENT TEM PERATURE IC = 20·IB 2 1 VBE(sat) 0.5 0.2 0.1 0.05 t) sa E( VC 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 IC – Collector Current – A 2 5 10 Transistors SMD Type NPN Transistors 2SD1615 ■ Typical Characterisitics GAIN BANDWIDTH PRODUCT vs. EM ITTER CURRENT 1000 Cob – Output Capacitance – pF 500 f T – Gain Bandw idth Product – M HZ 100 VEC = 2.0 V 200 100 50 20 10 5 50 OUTPUT CAPCITANCE vs. COLLECTOR TO BASE VOLTAGE IE = 0 f = 1.0 M HZ 20 10 5 2 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 IC – Collector Current – A 5 10 1 2 5 10 20 50 VCB – Collector to Base Voltage – V 100 SWITCHING TIM E vs. COLLECTOR CURRENT t – Sw itching Time – µs 2 1 VCC = 10 V IC = 10.IBI = –10.IB2 VBE(off) . = –2 to 3 V PW =. 2 µs Duty Cycle ≤ 2 % t stg 0.5 0.2 0.1 0.05 tf t on 0.01 0.02 0.05 0.1 0.2 IC – Collector Current – A 0.5 1 www.kexin.com.cn 3