Transistors SMD Type PNP Transistors 2SB815 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 ● Complimentary to 2SD1048. +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Large current capacity (IC=0.7A) and low-saturation voltage. 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -15 Emitter - Base Voltage VEBO -5 Unit V Collector Current - Continuous IC -700 mA Collector Current - Pulse ICP -1.5 A Collector Power Dissipation PC 200 mW Junction Temperature Storage Temperature range TJ 125 Tstg -55 to 125 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -15 -5 Typ Max V Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= - 15V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) DC current gain hFE Collector output capacitance Cob Transition frequency fT IC=-5 mA, IB=-0.5mA -15 -35 IC=-100mA, IB=-10mA -60 -120 IC=-100mA, IB=-10mA -1.2 VCE= -2V, IC= -50mA 200 VCE= -2V, IC= -500mA 80 Unit uA mV V 600 VCB= -10V, IE= 0,f=1MHz 13 pF VCE= -10V, IC= -50mA 250 MHz ■ Classification of hfe(1) Type 2SB815-B6 2SB815-B7 Range 200-400 300-600 Marking B6 B7 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB815 ■ Typical Characterisitics IC -- VCE --800 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV A 0m --5 Collector Current, IC -- mA --700 --600 A 0m --3 A m --10 --500 --6mA --400 --2mA --300 --1mA --200 --100 0 --0.1 --0.2 --0.3 --0.4 3 2 1000 5 3 2 100 IB -- VBE 3 2 10 Gain-Bandwidth Product, f T -- MHz 2SB815 Base Current, IB -- ∝A 20 0 0.2 0.4 0.6 0.8 hFE -- IC 3 Output Capacitance, Cob -- pF DC Current Gain, hFE 3 5 2 100 3 5 1000 f T -- IC VCE=10V 5 3 815 2SB 2 100 7 5 3 2 (For PNP, minus sign is omitted.) 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA Cob -- VCB 100 f=1MHz 3 5 2SB815 2 100 7 5 3 2 (For PNP, minus sign is omitted.) 10 1.0 2 2 10 5 VCE=2V 7 5 Collector Current, IC -- mA 10 1.0 1.0 Base-to-Emitter Voltage, VBE -- V 1000 3 7 40 0 2 1000 80 60 (For PNP, minus sign is omitted.) 5 1.0 --0.5 VCE=5V (For PNP, minus sign is omitted.) 815 2SB 5 Collector-to-Emitter Voltage, VCE -- V 100 IC / IB=10 5 IB=0 0 VCE(sat) -- IC 10000 2SB815 2 3 5 10 2 3 5 100 2 3 5 Collector Current, IC -- mA www.kexin.com.cn 1000 2 3 5 2SB 2 815 10 7 5 3 2 1.0 (For PNP, minus sign is omitted.) 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 Transistors SMD Type PNP Transistors 2SB815 ■ Typical Characterisitics PC -- Ta Collector Dissipation, PC -- mW 300 250 200 150 100 50 0 0 20 40 60 80 100 Ambient Temperature, Ta -- 。C 120 140 www.kexin.com.cn 3