Transistors SMD Type PNP Transistors 2SB766A ■ Features 1.70 0.1 ● Large collector power dissipation PC ● Complimentary to 2SD874A. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector Current - Pulse ICP -1.5 Collector Power Dissipation PC 1 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -2 mA， IB=0 -50 -5 Typ Max V Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=-50mA -0.2 -0.4 Base - emitter saturation voltage VBE(sat) IC=-500 mA, IB=-50mA -0.85 -1.2 hFE(1) VCE= -10V, IC= -500mA 85 hFE(2) VCE=- 5V, IC= -1A 50 DC current gain Collector output capacitance Cob Transition frequency fT Unit nA V 340 VCB= -10V, IE= 0,f=1MHz 20 VCE= -10V, IC= -50mA,f=200MHz 200 30 pF MHz ■ Classification of hfe(1) Type 2SB766A-Q 2SB766A-R 2SB766A-S Range 85-170 120-240 170-340 Marking BQ BR BS www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB766A ■ Typical Characterisitics Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 1.0 –1.25 IB=–10mA –9mA –8mA –7mA –6mA –5mA – 0.75 0.6 –4mA –3mA – 0.50 0.4 –2mA – 0.25 0.2 40 60 0 80 100 120 140 160 0 –2 VBE(sat) — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –30 –10 –3 Ta=–25˚C 75˚C – 0.3 – 0.1 – 0.03 –3 400 Ta=75˚C 300 25˚C 200 –25˚C 100 –10 –10 IE=0 f=1MHz Ta=25˚C 35 –1 –3 –10 30 25 –3 –1 ICP IC t=10ms t=1s – 0.1 20 – 0.03 15 – 0.01 10 – 0.003 5 –30 –100 Collector to base voltage VCB (V) www.kexin.com.cn –1 –3 –10 Collector current IC (A) VCB=–10V Ta=25˚C 160 140 120 100 80 60 40 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 0 1 3 10 30 Emitter current IE (mA) Single pulse Ta=25˚C – 0.3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 20 0 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) Collector output capacitance Cob (pF) –1 500 Area of safe operation (ASO) –3 –25˚C – 0.03 180 Cob — VCB 40 Ta=75˚C 25˚C – 0.1 VCE=–10V Collector current IC (A) 45 –1 200 Collector current IC (A) 50 0 –1 –10 –3 fT — I E 600 IC/IB=10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –8 –10 hFE — IC –100 –1 –6 –30 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 25˚C –4 IC/IB=10 – 0.3 Transition frequency fT (MHz) 20 –1mA 2SB766A 0 –100 Ta=25˚C –1.00 0.8 0 2 VCE(sat) — IC Collector current IC (A) Collector power dissipation PC (W) IC — VCE –1.50 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 –10 Collector to emitter voltage VCE (V) 100