MOSFET SMD Type N-Channel MOSFET DMZ6005E (KMZ6005E) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 0.4 3 ● RDS(ON) ＜ 700mΩ (VGS = 0 V) 1 ● Fast Switching Speed 0.55 ● ID = 20mA +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) = 600V 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● RoHS Compliant +0.05 0.1 -0.01 0-0.1 +0.1 0.38 -0.1 +0.1 0.97 -0.1 ● Halogen-free available 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 600 Drain-Gate Voltage[ VDG 600 Gate-Source Voltage Unit V VGS ±20 Continuous Drain Current ID 20 Pulsed Drain Current IDM 80 Power Dissipation PD 500 mW RthJA 250 ℃/W TL 300 Thermal Resistance.Junction- to-Ambient Soldering Temperature Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 mA ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET DMZ6005E (KMZ6005E) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage VDSS Saturated Drain-to-Source Current IDSS Drain-to-Source Leakage Current Gate-Body Leakage Current ID(OFF) IGSS Test Conditions ID=250μA, VGS=-5V VGS=0V, VDS=25V VGS=0V, ID=3mA gFS VDS=10V, ID=5mA Reverse Transfer Capacitance Crss 5 25 -3 -1.8 700 15.4 Qgd 0.56 4 td(off) Turn-Off Fall Time Note.: Pulse width≤380μs; duty cycle≤2%. ■ Marking Marking VGS=-5~5V, VDS=300V, ID=7mA VGS = -5V~5V VDD = 300V, ID=7mA RG = 20Ω 605E www.kexin.com.cn VSD nC 0.12 9 ns 14 84 tf Diode Forward Voltage pF 1.55 Gate Drain Charge Turn-Off DelayTime Ω 1.8 Qg tr V mS 2.6 Qgs td(on) uA 12.3 VGS=-5V, VDS=25V, f=1MHz Total Gate Charge Turn-On DelayTime mA ±20 Gate Source Charge Turn-On Rise Time Unit V VDS=0V, VGS=±20V VDS=3V , ID=8 uA Ciss 600 10 RDS(On) Coss Max 0.1 VGS(OFF) Input Capacitance Typ VDS=600V, VGS=-5V ,TJ = 125℃ Static Drain-Source On-Resistance Output Capacitance Min VDS=600V, VGS=-5V Gate-to-Source Cut-off Voltage Forward Transconductance 2 Symbol IS=3mA,VGS=-10V 1.2 V MOSFET SMD Type N-Channel MOSFET DMZ6005E (KMZ6005E) ■ Typical Characterisitics Figure 1. Maximum Power Dissipation vs. Case Temperature 25.0 0.5 20.0 0.4 ID, Drain Current (mA) PD, Power Dissipation (W) 0.6 Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.3 0.2 0.1 15.0 10.0 5.0 0.0 0 25 50 75 100 125 TC, Case Temperature (℃) 25 150 ID, Drain Current(mA) 50 VGS=0.5V VGS=0.2V VGS=0.1V VGS=-0.1V VGS=-0.2V 40 VGS=-0.5V 30 20 10 0 0 20 40 60 80 100 4 3 2 1 0 C,Capacitance(pF) 14 CISS 10 8 6 COSS CRSS 2 0 0 10 20 30 VDS,Drain Voltage(V) 40 -1.5 -1 -0.5 0 0.5 1 VGS, Gate-to-Source Voltage,(V) 5 VGS. Gate-to-Source Voltage(V) 16 4 150 5 -2 Figure 5. Typical Capacitance vs. Drain-toSource Voltage 12 125 VDS = 3V 6 VDS, Drain-to-Source Voltage(V) 18 100 Figure 4. Typical Transfer Characteristics 7 ID, Drain-to-Source Current (mA) VGS=1V VGS=10V 75 TC, Case Temperature (℃) Figure 3. Typical Output Characteristics 60 50 Figure 6. Typical Gate Charge vs. Gate-toSource Voltage 4 3 2 1 0 -1 -2 -3 -4 -5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 QG, Gate Charge(nC) www.kexin.com.cn 3