SMD Type MOSFET

MOSFET
SMD Type
N-Channel Power MOSFET
KX1N60DS
SOT-23-3
Unit: mm
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
● Depletion mode
1
0.55
● ESD improved capability
+0.2
1.6 -0.1
+0.2
2.8 -0.1
■ Features
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
● dv/dt rated
+0.2
-0.1
● Pb-free lead plating;ROHS compliant
1.1
● Halogen Free
0-0.1
+0.1
0.68 -0.1
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Tc = 70℃
Pulsed Drain Current
(Note.1)
Power Dissipation
Gate Source ESD(HBM-C=100pF,R=1.5KΩ)
Peak Diode Recovery dv/dt
(Note.2)
ID
24
mA
IDM
120
PD
0.5
W
VESD(G-S)
300
V
dv/dt
5
V/ns
℃/W
RthJA
250
TL
300
Junction Temperature
TJ
150
Tstg
-55 to 150
Storage Temperature Range
V
30
Maximum Temperature for soldering
Thermal Resistance.Junction- to-Ambient
Unit
℃
Note.1: Repetitive Rating :Pulse width limited by maximum junction temperature
Note.2: IF=0.01A,di/dt ≤ 100A/us,VDD ≤ BVDS,Start TJ=25 ℃
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MOSFET
SMD Type
N-Channel Power MOSFET
KX1N60DS
■ Electrical Characteristics Ta = 25℃
Parameter
Test Conditions
Min
Typ
Max
Drain-Source Breakdown Voltage
VDSX
ID=250μA, VGS=-5V
600
Gate-Source Breakdown Voltage
VGSS
IGS= ± 1mA (Open Drain)
20
Zero Gate Voltage Drain Current
IDSS
VDS=25V, VGS=0V
12
Off-State Drain-Source Current
ID(off)
VDS=600V, VGS=-5V
0.1
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±10
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
Symbol
VGS(th)
RDS(On)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate Source Charge
Qgs
mA
-1.8
-1
350
700
VGS= 10V, ID=16mA
400
800
VDS=50V, ID=10mA
-2.7
V
VGS= 0 V, ID=3mA
VDS=3V , ID=8μA
0.008 0.017
9.9
tf
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Maximum Body-Diode Continuous Current
IS
Maximum Pullsed Drain-Source Current
ISM
Diode Forward Voltage
VSD
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ID=10mA, VDS=300V, , RGEN=6Ω,
VGS= -5…7V
nC
0.5
0.37
Turn-Off Fall Time
pF
1.14
VGS=-5V to 5V, VDD=400V, ID=10mA
Qgd
tr
Ω
1.08
td(on)
td(off)
V
S
4.53
Gate Drain Charge
Turn-On Rise Time
uA
50
VGS=-5V, VDS=25V, f=1MHz
Turn-On DelayTime
Turn-Off DelayTime
Unit
55.8
ns
56.4
136
IF= 10mA, dI/dt= 100A/μs, VR=300V ,
Tj = 25℃
Ta = 25℃
IS=16mA,VGS=-5V
243
636
nC
25
100
1.2
mA
V
MOSFET
SMD Type
N-Channel Power MOSFET
KX1N60DS
■ Typical Characterisitics
150
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3
MOSFET
SMD Type
N-Channel Power MOSFET
KX1N60DS
■ Typical Characterisitics
.
4
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MOSFET
SMD Type
N-Channel Power MOSFET
KX1N60DS
■ Typical Characterisitics
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5