MOSFET SMD Type N-Channel Power MOSFET KX1N60DS SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Depletion mode 1 0.55 ● ESD improved capability +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● dv/dt rated +0.2 -0.1 ● Pb-free lead plating;ROHS compliant 1.1 ● Halogen Free 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Continuous Drain Current Tc = 70℃ Pulsed Drain Current (Note.1) Power Dissipation Gate Source ESD(HBM-C=100pF,R=1.5KΩ) Peak Diode Recovery dv/dt (Note.2) ID 24 mA IDM 120 PD 0.5 W VESD(G-S) 300 V dv/dt 5 V/ns ℃/W RthJA 250 TL 300 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range V 30 Maximum Temperature for soldering Thermal Resistance.Junction- to-Ambient Unit ℃ Note.1: Repetitive Rating :Pulse width limited by maximum junction temperature Note.2: IF=0.01A,di/dt ≤ 100A/us,VDD ≤ BVDS,Start TJ=25 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel Power MOSFET KX1N60DS ■ Electrical Characteristics Ta = 25℃ Parameter Test Conditions Min Typ Max Drain-Source Breakdown Voltage VDSX ID=250μA, VGS=-5V 600 Gate-Source Breakdown Voltage VGSS IGS= ± 1mA (Open Drain) 20 Zero Gate Voltage Drain Current IDSS VDS=25V, VGS=0V 12 Off-State Drain-Source Current ID(off) VDS=600V, VGS=-5V 0.1 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 Gate Threshold Voltage Static Drain-Source On-Resistance 2 Symbol VGS(th) RDS(On) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs mA -1.8 -1 350 700 VGS= 10V, ID=16mA 400 800 VDS=50V, ID=10mA -2.7 V VGS= 0 V, ID=3mA VDS=3V , ID=8μA 0.008 0.017 9.9 tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Maximum Pullsed Drain-Source Current ISM Diode Forward Voltage VSD www.kexin.com.cn ID=10mA, VDS=300V, , RGEN=6Ω, VGS= -5…7V nC 0.5 0.37 Turn-Off Fall Time pF 1.14 VGS=-5V to 5V, VDD=400V, ID=10mA Qgd tr Ω 1.08 td(on) td(off) V S 4.53 Gate Drain Charge Turn-On Rise Time uA 50 VGS=-5V, VDS=25V, f=1MHz Turn-On DelayTime Turn-Off DelayTime Unit 55.8 ns 56.4 136 IF= 10mA, dI/dt= 100A/μs, VR=300V , Tj = 25℃ Ta = 25℃ IS=16mA,VGS=-5V 243 636 nC 25 100 1.2 mA V MOSFET SMD Type N-Channel Power MOSFET KX1N60DS ■ Typical Characterisitics 150 www.kexin.com.cn 3 MOSFET SMD Type N-Channel Power MOSFET KX1N60DS ■ Typical Characterisitics . 4 www.kexin.com.cn MOSFET SMD Type N-Channel Power MOSFET KX1N60DS ■ Typical Characterisitics www.kexin.com.cn 5