KEXIN KDB2570

MOSFET
SMD Type
150V N-Channel PowerTrench MOSFET
KDB2570(FDB2570)
TO-263
Features
RDS(ON) = 90 m
@ VGS = 10 V
+0.1
1.27-0.1
22 A, 150 V. RDS(ON) = 80 m
@ VGS = 6 V
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
5.60
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
High performance trench technology for extremely
low RDS(ON)
+0.2
2.54-0.2
+0.2
15.25-0.2
Fast switching speed
+0.1
0.81-0.1
2.54
5.08
+0.2
2.54-0.2
+0.2
8.7-0.2
Low gate charge
1 Gate
0.4
+0.1
-0.1
+0.2
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
20
V
Drain current-Continuous
ID
22
A
Drain current-Pulsed
IDP
50
A
93
W
Power dissipation
PD
0.63
Derate above 25
Thermal Resistance Junction to Ambient
RèJA
Thermal Resistance, Junction-to-Case
W/
62.5
/W
/W
RèJC
1.6
Channel temperature
Tch
175
Storage temperature
Tstg
-55 to +175
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MOSFET
SMD Type
KDB2570(FDB2570)
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain to source breakdown voltage
Testconditons
VDSS
ID=250ìA
Drain cut-off current
IDSS
VDS=120V,VGS=0
Gate leakage current
IGSS
Gate threshold voltage
RDS(on)
ID(on)
Forward Transconductance
2.0
2.6
4.0
VGS=10V,ID=11A
61
80
VGS=6V,ID=10A
63
90
127
175
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Turn-On Delay Time
2
S
1911
pF
106
pF
33
pF
56
nC
12
nC
td(ON)
12
22
ns
tr
5
10
ns
33
53
ns
23
37
ns
22
A
1.3
V
tf
Maximum Continuous Drain-Source
Diode Forward Current
IS
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39
Qgd
td(OFF)
Source to Drain Diode Voltage
mÙ
A
40
VDS = 75 V, ID = 11 A,VGS = 10 V*
V
nC
Fall Time
* Pulse Test: Pulse Width
VDS=75V,VGS=0,f=1MHZ
A
nA
7
Rise Time
Turn-Off Delay Time
25
VDS = 10 V, ID = 11 A
Unit
V
100
VDS = VGS, ID = 250ìA
VGS = 10 V, VDS = 10 V
gFS
Max
1
VGS=10V,ID=11A,TC=125
On–State Drain Current
Typ
VGS= 20V
VGS(th)
Drain to source on-state resistance
Min
150
VGS=0V
VSD
300ìs, Duty Cycle
VDD = 75 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VGS = 0 V, IS = 11 A *
2.0%
*
0.83