MOSFET SMD Type 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) TO-263 Features Unit: mm @ VGS = 10 V +0.1 1.27-0.1 19 A, 200 V. RDS(ON) = 130 m Low gate charge (27 nC typical) +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High power and current handling capability +0.2 2.54-0.2 +0.2 15.25-0.2 low RDS(ON) +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 +0.2 8.7-0.2 High performance trench technology for extremely 5.60 Fast switching speed 1 Gate 0.4 +0.1 -0.1 +0.2 -0.2 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 20 V Drain current-Continuous ID Drain current-Pulsed IDP Power dissipation PD Derate above 25 19 A 40 A 93 W 0.63 W/ Peak Diode Recovery dv/dt dv/dt 3.2 V/ns Thermal Resistance Junction to Ambient RèJA 62.5 /W Thermal Resistance, Junction-to-Case RèJC 1.6 /W Channel temperature Tch 175 Storage temperature Tstg -65 to +175 www.kexin.com.cn 1 MOSFET SMD Type KDB2670(FDB2670) Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Drain to source breakdown voltage VDSS ID=250ìA Drain cut-off current IDSS VDS=160V,VGS=0 1 Gate leakage current IGSS VGS= 20V 100 Gate threshold voltage VGS(th) Drain to source on-state resistance On–State Drain Current RDS(on) 200 VGS=0V VDS = VGS, ID = 250ìA 2.0 4 4.5 98 130 VGS=10V,ID=10A,TJ=125 205 285 20 gFS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 24 Total Gate Charge Qg 27 Gate-Source Charge Qgs VDS=100V,VGS=0,f=1MHZ VDS = 100 V, ID = 10 A,VGS = 10 V* A nA V mÙ A Forward Transconductance VDS = 10 V, ID = 10 A Unit V VGS=10V,ID=10A VGS = 10 V, VDS = 10 V ID(on) 24 S 1320 pF 71 pF pF 38 7 nC nC Gate-Drain Charge Qgd 10 Turn-On Delay Time td(ON) 14 25 ns 5 10 ns 26 41 ns 23 37 ns 19 A 1.3 V Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf Maximum Continuous Drain-Source Diode Forward Current IS Source to Drain Diode Voltage * Pulse Test: Pulse Width 2 Testconditons www.kexin.com.cn VSD 300ìs, Duty Cycle VDD = 100V, ID = 1 A, VGS = 10 V, RGEN = 6 VGS = 0 V, IS = 11 A * 2.0% * 0.83 nC