SMD Type Transistors

Transistors
SMD Type
NPN Transistors
MMBTA42W
(KMBTA42W)
■ Features
● Collector-emitter voltage VCE = 300V
● Collector current IC = 500mA
● NPN high voltage transistors
3
COLLECTOR
1
BASE
1 Base
2 Emitter
3 Collector
2
EMITTER
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
300
Collector - Emitter Voltage
VCEO
300
Emitter - Base Voltage
VEBO
6
IC
500
Collector Current - Continuous
Collector Power Dissipation
mA
PC
150
mW
550
℃/W
TJ
150
Tstg
-65 to 150
Junction Temperature
Storage Temperature Range
V
RθJA
(Note.1)
Thermal resi stance from junct ion to ambient (Note.1)
Unit
℃
Note.1:Mounted on an FR4 PCB, single-sided copper, mini pad.
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
300
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
300
Typ
Max
V
6
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
Collector-base cut-off current
ICBO
VCB= 200 V , IE= 0
100
Emitter cut-off current
IEBO
VEB= 6V , IC=0
100
Collector-emitter saturation voltage
VCE(sat)
IC=20 mA, IB=2mA
0.5
Base - emitter saturation voltage
VBE(sat)
IC=20 mA, IB=2mA
0.9
hFE(1)
VCE= 10V, IC= 1mA
60
hFE(2)
VCE= 10V, IC= 10mA
100
hFE(3)
VCE= 10V, IC= 30mA
70
DC current gain
Collector output capacitance
Transition frequency
Cob
fT
VCB= 20V, IE= 0,f=1MHz
VCE= 20V, IC= 10mA,f=100MHz
Unit
V
200
3
50
nA
pF
MHz
■ Marking
Marking
1D
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1
Transistors
SMD Type
NPN Transistors
MMBTA42W
(KMBTA42W)
■ Typical Characterisitics
0.9
TJ = 25°C
VCE ( SAT ) (V)
VBE ( SAT ) (V)
0.8
1
TJ = 75°C
0.7
0.6
0.5
0.4
TJ = 125°C
TJ = 150°C
0.3
0.2
0.001
IC/IB = 10
0.01
0.1
0.9
IC/IB = 10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
IC, Collector Current (A)
200
VCE = 10V
hFE
TJ = 125°C
100
TJ = 75°C
50
TJ = 25°C
0
0.001
0.01
0.1
1
IC, Collector Current (A)
Fig.3 Typical DC Current Gain vs Collector
Current
2
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TJ = 75°C
TJ = 25°C
0.01
0.1
Fig.2 Typical Collector-Emitter Saturation
Voltage
C, Capacitance (pF)
TJ = 150°C
150
TJ = 125°C
IC, Collector Current (A)
Fig.1 Typical Base-Emitter Saturation Voltage
250
TJ = 150°C
100
Ceb
TA= 25°C
10
Ccb
1
0.2
2
20
VR, Reverse Voltage (V)
Fig.4 Typical Capacitance