BRY55 SERIES.aspx?ext=

High-reliability discrete products
and engineering services since 1977
BRY55 SERIES
SILICON CONTROLLED RECTIFIER
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage(1)
(RGK = 1000Ω, TJ = 25-125°C)
BRY55-30
BRY55-60
BRY55-100
BRY55-200
BRY55-400
BRY55-500
BRY55-600
Symbol
Value
30
60
100
200
400
500
600
VRRM, VDRM
Forward current RMS (all conduction angles)
IT(RMS)
Peak forward surge current, TA = 25°C
(1/2 cycle, sine wave, 60Hz)
ITSM
Circuit fusing considerations, TA = 25°C
(t = 8.3ms)
I2t
Forward peak gate power, TA = 25°C
PGM
Forward peak gate current , TA = 25°C (300µs, 120 PPS)
Unit
Volts
0.8
Amps
Amps
8
A2s
0.15
0.1
Watts
IGFM
1
Amps
Operating junction temperature range @ rated VRRM and VDRM
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
+230
°C
Lead solder temperature (<1.5mm from case, 10s max)
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Symbol
Maximum
Unit
Thermal resistance, junction to case
Characteristic
RӨJC
75
°C/W
Thermal resistance, junction to ambient
RӨJA
200
°C/W
ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic
Symbol
Peak forward blocking current
(VD = rated VDRM @ TC = 125°C)
IDRM
Peak reverse blocking current
(VR = rated VRRM @ TC = 125°C)
IRRM
Forward “on” voltage(2)
ITM = 1A peak @ TA = 25°C)
VTM
Gate trigger current (continuous dc)(3)
(Anode voltage = 7Vdc, RL = 100 Ω)
IGT
Min.
Max.
-
100
-
100
-
1.7
-
200
Unit
µA
µA
Volts
µA
Rev. 20130117
High-reliability discrete products
and engineering services since 1977
BRY55 SERIES
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic
Gate trigger voltage (continuous dc)
(Anode voltage = 7Vdc, RL = 100 Ω)
(Anode voltage = rated VDRM, RL = 100 Ω)
TC = 25°C
TC = -40°C
TC = 125°C
Holding current
(Anode voltage = 7Vdc, initiating current = 20mA)
TC = 25°C
TC = -40°C
Symbol
Min.
Max.
VGT
Unit
Volts
0.1
0.8
1.2
-
IH
mA
-
5
10
Note 2: Forward current applied for 1ms maximum duration, duty cycle ≤ 1%.
Note 3: RGK current is not included in measurement.
MECHANICAL CHARACTERISTICS
Case
TO-92
Marking
Body painted, alpha-numeric
Pin out
See below
Rev. 20130117
High-reliability discrete products
and engineering services since 1977
BRY55 SERIES
SILICON CONTROLLED RECTIFIER
Rev. 20130117