High-reliability discrete products and engineering services since 1977 BRY55 SERIES SILICON CONTROLLED RECTIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive forward and reverse blocking voltage(1) (RGK = 1000Ω, TJ = 25-125°C) BRY55-30 BRY55-60 BRY55-100 BRY55-200 BRY55-400 BRY55-500 BRY55-600 Symbol Value 30 60 100 200 400 500 600 VRRM, VDRM Forward current RMS (all conduction angles) IT(RMS) Peak forward surge current, TA = 25°C (1/2 cycle, sine wave, 60Hz) ITSM Circuit fusing considerations, TA = 25°C (t = 8.3ms) I2t Forward peak gate power, TA = 25°C PGM Forward peak gate current , TA = 25°C (300µs, 120 PPS) Unit Volts 0.8 Amps Amps 8 A2s 0.15 0.1 Watts IGFM 1 Amps Operating junction temperature range @ rated VRRM and VDRM TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C +230 °C Lead solder temperature (<1.5mm from case, 10s max) Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Symbol Maximum Unit Thermal resistance, junction to case Characteristic RӨJC 75 °C/W Thermal resistance, junction to ambient RӨJA 200 °C/W ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted) Characteristic Symbol Peak forward blocking current (VD = rated VDRM @ TC = 125°C) IDRM Peak reverse blocking current (VR = rated VRRM @ TC = 125°C) IRRM Forward “on” voltage(2) ITM = 1A peak @ TA = 25°C) VTM Gate trigger current (continuous dc)(3) (Anode voltage = 7Vdc, RL = 100 Ω) IGT Min. Max. - 100 - 100 - 1.7 - 200 Unit µA µA Volts µA Rev. 20130117 High-reliability discrete products and engineering services since 1977 BRY55 SERIES SILICON CONTROLLED RECTIFIER ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted) Characteristic Gate trigger voltage (continuous dc) (Anode voltage = 7Vdc, RL = 100 Ω) (Anode voltage = rated VDRM, RL = 100 Ω) TC = 25°C TC = -40°C TC = 125°C Holding current (Anode voltage = 7Vdc, initiating current = 20mA) TC = 25°C TC = -40°C Symbol Min. Max. VGT Unit Volts 0.1 0.8 1.2 - IH mA - 5 10 Note 2: Forward current applied for 1ms maximum duration, duty cycle ≤ 1%. Note 3: RGK current is not included in measurement. MECHANICAL CHARACTERISTICS Case TO-92 Marking Body painted, alpha-numeric Pin out See below Rev. 20130117 High-reliability discrete products and engineering services since 1977 BRY55 SERIES SILICON CONTROLLED RECTIFIER Rev. 20130117