Transistors SMD Type NPN Transistors 2SC4618 SOT-523 U n it: m m +0.1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 1 ● High DC Current Gain ● Small Package 0.36±0.1 +0.15 1.6-0. 15 ● High Voltage and Current 0.8±0.1 2 0.55 (REF.) ■ Features 0.15±0.05 3 0.3±0.05 +0.1 0.5 -0.1 +0.1 0.8-0. 1 +0.05 0.75-0. 05 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 5 IC 50 Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Range Unit V mA PC 150 mW RΘJA 833 ℃/W TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 25 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 24 V , IE= 0 500 Emitter cut-off current IEBO VEB= 3V , IC=0 500 V Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1mA 0.3 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=1mA 1.2 DC current gain hFE VCE= 6V, IC= 1mA Collector output capacitance Cob VCB= 6V, IE= 0,f=1MHz Transition frequency fT VCE= 6V, IC= 1mA,f=100MHz 56 nA V 270 2.2 150 Unit pF MHz ■ Classification of hfe Marking 2SC4618-N 2SC4618-P 2SC4618-Q Marking 56-120 82-180 120-270 Marking AN AP AQ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC4618 ■ Typical Characterisitics Static Characteristic 2.25 16.2uA 14.4uA 12.6uA 1.25 10.8uA 1.00 9.0uA 7.2uA 0.75 5.4uA 0.50 Ta=100℃ DC CURRENT GAIN COLLECTOR CURRENT IC hFE (mA) IC 1.50 —— 18.0uA 2.00 1.75 hFE 1000 COMMON EMITTER Ta=25℃ 100 Ta=25℃ 3.6uA COMMON EMITTER VCE= 6V 0.25 0.00 IB=1.8uA 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE VBEsat 1000 —— 7 10 0.3 8 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC (mA) IC β=10 800 Ta=25℃ 600 Ta=100 ℃ 400 0.1 1 IC 50 —— IC 100 Ta=100 ℃ Ta=25℃ 10 0.1 50 10 COLLECTOR CURREMT 1 VBE 1000 50 10 COLLECTOR CURREMT (mA) fT —— IC (mA) IC (MHz) COMMON EMITTER VCE=6V fT 10 TRANSITION FREQUENCY T= a 10 0 T =2 5℃ a ℃ IC (mA) VCEsat 1000 50 10 COLLECTOR CURRENT β=10 COLLECTOR CURRENT 1 VCE (V) 1 100 COMMON EMITTER VCE= 6V Ta=25℃ 0.1 300 600 900 1200 BASE-EMMITER VOLTAGE VBE (mV) PC COLLECTOR POWER DISSIPATION PC (mW) 200 —— Ta 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 2 www.kexin.com.cn 100 Ta 125 (℃) 150 10 0.11 1 COLLECTOR CURRENT IC (mA) 10 14