KST8550S

Transistors
SMD
SMD Type
Type
PNP Transistors
KST8550S
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
1
0.55
+0.1
1.3 -0.1
+0.1
2.4 -0.1
Collector current: IC-=0.5A
0.4
3
Features
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
1.Base
0-0.1
+0.1
0.38 -0.1
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-0.5
A
Collector Power Dissipation
PC
0.3
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditi ons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC=-100 A, IE=0
-40
Collector-emitter breakdown voltage
VCEO
IC=-1mA, IB=0
-25
V
Emitter-base breakdown voltage
VEBO
IE=-100 A, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE
DC current gain
V
-0.1
A
VCE=-20V, IB=0
-1
A
VEB=-3V, IC=0
-0.1
A
VCE=-1V, IC=-50mA
120
VCE=-1V, IC=-500mA
50
400
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC=-500mA, IB=-50mA
-1.2
V
Transition frequency
fT
VCE= -6V, IC= -20mA,f=30MHz
150
MHz
■ Classification of hfe(1)
Type
KST8550S
KST8550S-L
KST8550S-H
KST8550S-J
Range
200-350
120-200
144-202
300-400
Marking
2TY
www.kexin.com.cn
1
Transistors
SMD
SMD Type
Type
KST8550S
Typical Characteristics
IC
-90
VCE
——
-360uA
-240uA
-200uA
-40
-160uA
-120uA
100
IB=-40uA
-10
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-10
COMMON EMITTER
VCE=-1V
-12
VCE (V)
1
T a=
IC
-1
00 ℃
-10
COLLECTOR CURRENT
IC
——
IC
-100
VCEsat
-100
(mA)
IC
——
0℃
10
T a=
℃
25
T a=
β=10
-1
-10
-100
COLLECTOR CURRENT
fT
VBE
-500
(mA)
-100
-10
-500
IC
——
400
IC
-500
(mA)
IC
(MHz)
-500
-10
-500
β=10
-400
-1
COLLECTOR CURRENT
25℃
T a=
-800
10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-1200
fT
-100
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00 ℃
a
COLLECTOR CURRENT
IC
(mA)
Ta =25℃
-80uA
-20
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
DC CURRENT GAIN
-280uA
-30
-0
Ta =100℃
-320uA
-50
IC
——
500
COMMON
EMITTER
Ta=25℃
hFE
(mA)
-60
COLLECTOR CURRENT
IC
-80
-70
hFE
-400uA
-10
COMMON EMITTER
VCE=-1V
-1
-0
-300
-600
-900
100
COMMON EMITTER
VCE=-6V
10
-1200
Ta=25℃
-1
-10
——
VCB/VEB
(pF)
Cib
10
PC
400
Cob
CAPACITANCE
C
Cob/Cib
COLLECTOR POWER DISSIPATION
PC (mW)
50
-100
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
f=1MHz
IE=0/IC=0
——
IC
(mA)
Ta
300
200
100
Ta=25 ℃
1
-0.1
2
www.kexin.com.cn
-1
REVERSE VOLTAGE
V
(V)
-10
-20
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
(℃)
150