Transistors SMD SMD Type Type PNP Transistors KST8550S SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 +0.1 1.3 -0.1 +0.1 2.4 -0.1 Collector current: IC-=0.5A 0.4 3 Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.5 A Collector Power Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditi ons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100 A, IE=0 -40 Collector-emitter breakdown voltage VCEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage VEBO IE=-100 A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 Collector cut-off current ICEO Emitter cut-off current IEBO hFE DC current gain V -0.1 A VCE=-20V, IB=0 -1 A VEB=-3V, IC=0 -0.1 A VCE=-1V, IC=-50mA 120 VCE=-1V, IC=-500mA 50 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V Transition frequency fT VCE= -6V, IC= -20mA,f=30MHz 150 MHz ■ Classification of hfe(1) Type KST8550S KST8550S-L KST8550S-H KST8550S-J Range 200-350 120-200 144-202 300-400 Marking 2TY www.kexin.com.cn 1 Transistors SMD SMD Type Type KST8550S Typical Characteristics IC -90 VCE —— -360uA -240uA -200uA -40 -160uA -120uA 100 IB=-40uA -10 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VBEsat —— -10 COMMON EMITTER VCE=-1V -12 VCE (V) 1 T a= IC -1 00 ℃ -10 COLLECTOR CURRENT IC —— IC -100 VCEsat -100 (mA) IC —— 0℃ 10 T a= ℃ 25 T a= β=10 -1 -10 -100 COLLECTOR CURRENT fT VBE -500 (mA) -100 -10 -500 IC —— 400 IC -500 (mA) IC (MHz) -500 -10 -500 β=10 -400 -1 COLLECTOR CURRENT 25℃ T a= -800 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1200 fT -100 TRANSITION FREQUENCY T =2 5℃ a T =1 00 ℃ a COLLECTOR CURRENT IC (mA) Ta =25℃ -80uA -20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) DC CURRENT GAIN -280uA -30 -0 Ta =100℃ -320uA -50 IC —— 500 COMMON EMITTER Ta=25℃ hFE (mA) -60 COLLECTOR CURRENT IC -80 -70 hFE -400uA -10 COMMON EMITTER VCE=-1V -1 -0 -300 -600 -900 100 COMMON EMITTER VCE=-6V 10 -1200 Ta=25℃ -1 -10 —— VCB/VEB (pF) Cib 10 PC 400 Cob CAPACITANCE C Cob/Cib COLLECTOR POWER DISSIPATION PC (mW) 50 -100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) f=1MHz IE=0/IC=0 —— IC (mA) Ta 300 200 100 Ta=25 ℃ 1 -0.1 2 www.kexin.com.cn -1 REVERSE VOLTAGE V (V) -10 -20 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 (℃) 150