Transistors SMD Type PNP Transistors 2SA1797 ■ Features 1.70 0.1 ● Low saturation voltage ● Excellent DC current gain characteristics ● Complements to 2SC4672 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2 Collector Current - Pulse ICM -3 Collector Power Dissipation PC 500 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -50 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -50μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Unit V Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.35 Base - emitter saturation voltage VBE(sat) IC=-1A, IB=-50mA -1.2 V DC current gain hFE VCE= -2V, IC= -500mA Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 36 pF VCE= -2V, IC= -500mA,f=100MHz 200 MHz Transition frequency fT 82 nA 270 ■ Classification of hfe Type 2SA1797-P 2SA1797-Q Range 82-180 120-270 Marking AGP AGQ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SA1797 ■ Typical Characterisitics Static Characteristic -2.0 COMMON EMITTER Ta=25℃ (A) -10mA o Ta=100 C -9mA -8mA hFE COLLECTOR CURRENT IC -1.5 hFE —— IC 1000 -6mA -1.0 -5mA -4mA -3mA -0.5 o Ta=25 C DC CURRENT GAIN -7mA 100 -2mA -0.0 COMMON EMITTER VCE= -2V IB=-1mA -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCE 10 -10 IC (mA) IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) o Ta=25 C BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -1000 -2000 -100 VCEsat —— VBEsat —— IC o Ta=100 C -0.1 -10 COLLECTOR CURRENT -2 -1 -1 (V) -0.1 o Ta=100 C o Ta=25 C β=20 β=20 -1 -10 -100 COLLECTOR CURRENT VBE —— -2000 -1000 IC -2000 -0.01 -1 -10 (mA) COLLECTOR CURRENT IC Cob / Cib 1000 -1000 -2000 -100 IC (mA) VCB / VEB —— f=1MHz IE=0 / IC=0 o Ta=25 C C (pF) Cib -100 100 CAPACITANCE COLLECTOR CURRENT IC (mA) -1000 o Ta=100 C o Ta=25 C -10 Cob 10 COMMON EMITTER VCE=-2V -1 -0.0 -0.3 -0.6 -0.9 BASE-EMITTER VOLTAGE fT —— IC -20 -10 Pc 0.6 —— V (V) Ta COLLECTOR POWER DISSIPATION Pc (W) 0.5 100 0.4 TRANSITION FREQUENCY 0.3 0.2 COMMON EMITTER VCE=-2V 0.1 Ta=25℃ 10 -1 -10 COLLECTOR CURRENT 2 -1 REVERSE VOLTAGE fT (MHz) 200 1 -1.2 VBE(V) www.kexin.com.cn -70 IC (mA) 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150