Transistors DIP Type NPN Darlington Transistors TIP122 (KIP122) TO-220 3.30 ± 0.10 10.16 ± 0.20 2.54 ± 0.20 ø3.18 ± 0.10 ■ Features 15.80 ± 0.20 ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=100V 15.87 ± 0.20 6.68 ± 0.20 (0.70) (1.00x45 ) MAX1.47 0.80 ± 0.10 0 ) 1 #12 3 (3 9.75 ± 0.30 ● Medium Power Complementary Silicon Transistors 0.35 ± 0.10 +0.10 0.50 –0.05 2.76 ± 0.20 2.54TYP [2.54 ± 0.20 ] 4.70 ± 0.20 2.54TYP [2.54 ± 0.20 ] 9.40 ± 0.20 1. Base 2. Collector 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 100 Emitter - Base Voltage VEBO 5 IC 5 A W Collector Current - Continuous PC 2 Thermal Resistance Junction to Ambient RθJA 62.5 Thermal Resistance Junction to Case RθJC 1.92 Collector Power Dissipation Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 Unit V ℃/W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 100 Collector- emitter breakdown voltage VCEO Ic= 30 mA， IB= 0 100 Emitter - base breakdown voltage VEBO IE= 1 mA， IC= 0 5 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 0.2 Collector- emitter cut-off current ICEO VCE= 50 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 5V , IC=0 2 IC=3 A, IB=12 mA 2 IC=5 A, IB=20 mA 4 1.2 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) IC=3 A, IB=12 mA VBE VCE= 3V, IC= 3 A Base-emitter voltage DC current gain hFE Collector output capacitance Cob V mA V 2.5 VCE= 3V, IC= 0.5A 1000 VCE= 3V, IC= 3 A 1000 VCB= 10V, IE=0,f=0.1MHz Unit 200 pF www.kexin.com.cn 1 Transistors DIP Type NPN Darlington Transistors TIP122 (KIP122) ■ Typical Characterisitics Static Characteristic COMMON EMITTER T a=25 ℃ 5 1mA 0.9mA 0.8mA hFE 100000 —— IC 0.7mA 0.6mA 10000 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) 6 0.5mA 4 0.4mA 3 0.3mA 2 IB =0.2mA T a =100 ℃ 1000 T a =25 ℃ 100 10 1 0 COMMON EMITTER V CE =3V 1 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat 4000 —— VCE 6 1 10 100 IC VBEsat 2000 8000 1000 COLLECTOR CURRENT (V) IC (mA) IC —— 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1800 T a =25 ℃ T a =100 ℃ 100 1600 T a =25 ℃ 1400 1200 1000 T a =100 ℃ 800 600 400 200 β =250 10 50 100 COLLECTOR CURRENT IC 3000 —— IC 0 50 5000 1000 β =250 100 COLLECTOR CURRENT (mA) VBE 250 5000 1000 Cob/ Cib IC (mA) —— VCB/ VEB COMMON EMITTER V CE =3V 1000 f=1MHz IE =0/IC =0 T a =25 ℃ CAPACITANCE C (pF) ℃ ℃ 100 10 T= a 25 T= a 10 0 COLLCETOR CURRENT IC (mA) 200 1 0 200 400 600 800 1000 1200 1400 BASE-EMMITER VOLTAGE PC 2500 —— VBE 1600 1800 2000 C ob 100 Ta 1500 1000 500 0 0 25 50 75 AMBIENT TEMPERATURE www.kexin.com.cn 100 T 125 a ℃ ( 0 0 .1 1 REVERSE VOLTAGE (mV) 2000 COLLECTOR POWER DISSIPATION P (mW) C 150 50 0.1 2 C ib ) 150 10 V (V) 30