SMD Type SMD Type Transistors

Transistors
SMD Type
SMD Type
NPN Transistors
KST8050S
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
Collector Current: IC=0.5A
1
0.55
Features
+0.1
1.3 -0.1
+0.1
2.4 -0.1
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
1.Base
0-0.1
+0.1
0.38 -0.1
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
0.5
A
Collector Dissipation
PC
0.3
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditi ons
Collector-base breakdown voltage
VCBO
IC = 100 u A, I
Collector-emitter breakdown voltage
VCEO
=0
Max
Unit
IC = 1mA , IB = 0
25
V
5
Emitter-base Breakdown voltage
VEBO
IE = 100 u A, I
ICBO
VCB = 40 V , IE = 0
Collector-emitter cut-off current
ICEO
Emitter-base cut-off current
IEBO
hFE
Typ
V
Collector-base cut-off current
DC current gain
Min
40
E
C
=0
V
0.1
A
VCE = 20 V , IB = 0
1
A
VEB = 5 V , IC = 0
0.1
A
VCE = 1 V , IC = 50 mA
120
VCE = 1 V , IC = 500 mA
50
400
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA , IB = 50 mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC = 500 mA , IB = 50 mA
1.2
V
Transition frequency
fT
VCE = 6 V , IC = 20 mA , f = 30 MHz
150
MHz
■ Classification of hfe(1)
Type
KST8050S
KST8050S-L
KST8050S-H
KST8050S-J
Range
200-350
120-200
144-202
300-400
Marking
J3Y
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1
Transistors
SMD Type
SMD Type
KST8050S
Typical Characteristics
Static Characteristic
100
COLLECTOR CURRENT
60
DC CURRENT GAIN
300uA
250uA
200uA
40
150uA
——
IC
COMMON EMITTER
VCE=1V
Ta=100℃
hFE
350uA
IC
(mA)
400uA
80
hFE
1000
COMMON
EMITTER
Ta=25℃
Ta=25℃
100
100uA
20
IB=50uA
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
10
20
1
3
10
IC
VBEsat
1.2
IC
(mA)
IC
——
300
100
Ta=100℃
Ta=25℃
30
10
3
30
10
IC
500
IC
Ta=100℃
0.4
0.0
500
100
Ta=25℃
0.8
β=10
β=10
1
COLLECTOR CURRENT
1
3
30
10
(mA)
100
COLLECTOR CURRENT
—— VBE
Cob/ Cib
100
——
IC
VCB/ VEB
Ta=25℃
Cib
(pF)
30
30
C
Ta=25℃
10
Ta=100℃
CAPACITANCE
(mA)
IC
COLLECTOR CURRENT
f=1MHz
IE=0/ IC=0
100
3
1
Cob
10
3
0.3
0.1
0.2
0.4
0.6
0.8
1
0.1
1.0
fT
1000
1
0.3
—— IC
PC ——
400
VCE=6V
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
V
20
(V)
Ta
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
fT
TRANSITION FREQUENCY
500
(mA)
COMMON EMITTER
VCE=1V
100
10
10
100
30
COLLECTOR CURRENT
2
500
100
30
COLLECTOR CURRENT
(V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
500
VCE
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IC
(mA)
300
200
100
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150